The role of the bimodal distribution of ultra-fine silicon phase and nano-scale V-phase (AlSi2Sc2) on spark plasma sintered hypereutectic Al–Si–Sc alloys

2016 ◽  
Vol 657 ◽  
pp. 123-135 ◽  
Author(s):  
Nadimpalli Raghukiran ◽  
Ravi Kumar
Keyword(s):  
Bimodal Distribution ◽  
Silicon Phase ◽  
Nano Scale ◽  
Spark Plasma

scholarly journals Role of Nanocrystallites of Al-Based Glasses and H2O2 in Degradation Azo Dyes

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 39
Author(s):  
Qi Chen ◽  
Zhicheng Yan ◽  
Hao Zhang ◽  
KiBuem Kim ◽  
Weimin Wang
Keyword(s):  
Metallic Glasses ◽  
Azo Dye ◽  
Amorphous Matrix ◽  
Nano Scale ◽  
Transmission Electron ◽  
Melt Spun ◽  
Degradation Ability ◽  
Tem Transmission Electron Microscopy ◽  
Dye Solutions

Al-based metallic glasses have a special atomic structure and should have a unique degradation ability in azo dye solutions. The Al88Ni9Y3 (Y3), Al85Ni9Y6 (Y6) and Al82Ni9Y9 (Y9) glassy ribbons are melt spun and used in degrading methyl orange (MO) azo dye solution with adding H2O2. With increasing cY, the as-spun ribbons have an increasing GFA (glass formability) and gradually decreased the degradation rate of MO solution. TEM (transmission electron microscopy) results show that the Y3 ribbon has nano-scale crystallites, which may form the channels to transport elements to the surface for degrading the MO solution. After adding H2O2, the degradation efficiency of Al-based glasses is improved and the Y6 ribbon has formed nano-scale crystallites embedded in the amorphous matrix and it has the largest improvement in MO solution degradation. These results indicate that forming nano-scale crystallites and adding H2O2 are effective methods to improve the degradation ability of Al-based glasses in azo dye solutions.

scholarly journals The role of graphite addition on spark plasma sintered titanium nitride

2020 ◽  
Vol 9 (3) ◽  
pp. 6268-6277 ◽  
Author(s):  
O.J. Akinribide ◽  
B.A. Obadele ◽  
O.O. Ayeleru ◽  
S.O. Akinwamide ◽  
K. Nomoto ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Sintered Titanium ◽  
Spark Plasma

scholarly journals On the Role of the Electrical Field in Spark Plasma Sintering of UO2+x

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Vaclav Tyrpekl ◽  
Mohamed Naji ◽  
Michael Holzhäuser ◽  
Daniel Freis ◽  
Damien Prieur ◽  
...  
Keyword(s):  
Spark Plasma Sintering ◽  
Electrical Field ◽  
Plasma Sintering ◽  
Spark Plasma

Effect of Zr and C co-addition on the characteristics of ZrB2-based ceramics: Role of spark plasma sintering temperature

2020 ◽  
Vol 46 (16) ◽  
pp. 24975-24985 ◽  
Author(s):  
Behzad Nayebi ◽  
Nader Parvin ◽  
Jamshid Aghazadeh Mohandesi ◽  
Mehdi Shahedi Asl
Keyword(s):  
Spark Plasma Sintering ◽  
Sintering Temperature ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Co Addition

Enhanced electrical properties of ZnO varistor ceramics by spark plasma sintering: Role of annealing

2020 ◽  
Vol 46 (10) ◽  
pp. 15076-15083 ◽  
Author(s):  
Jie Liang ◽  
Xuetong Zhao ◽  
Jianjie Sun ◽  
Lulu Ren ◽  
Ruijin Liao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spark Plasma Sintering ◽  
Zno Varistor ◽  
Plasma Sintering ◽  
Spark Plasma

Influence of Gate Material and Process on Junctionless FET Subthreshold Performance

2016 ◽  
Vol 6 (2) ◽  
pp. 895
Author(s):  
Munawar A Riyadi ◽  
Irawan D Sukawati ◽  
Teguh Prakoso ◽  
Darjat Darjat
Keyword(s):  
Recent Progress ◽  
Electronic Device ◽  
Threshold Value ◽  
The Other ◽  
Subthreshold Slope ◽  
New Device ◽  
Nano Scale ◽  
Device Processing ◽  
Alternative Materials

The recent progress of dimension scaling of electronic device into nano scale has motivated the invention of alternative materials and structures. One new device that shows great potential to prolong the scaling is junctionless FET (JLFET). In contrast to conventional MOSFETs, JLFET does not require steep junction for source and drain. The device processing directly influence the performance, therefore it is crucial to understand the role of gate processing in JLFET. This paper investigates the influence of gate material and process on subthreshold performance of junctionless FET, by comparing four sets of gate properties and process techniques. The result shows that in terms of subthreshold slope, JLFET approaches near ideal value of 60 mV/decade, which is superior than the SOI FET for similar doping rate. On the other hand, the threshold value shows different tendencies between those types of device.

Nano-Scale Impact Dynamics of Ultra-Thin Bonded Layers

2009 ◽  
Author(s):  
Mircea Teodorescu ◽  
Stephanos Theodossiades ◽  
Homer Rahnejat
Keyword(s):  
Silicon Substrate ◽  
Viscoelastic Behavior ◽  
Impact Dynamics ◽  
Protective Layers ◽  
Nano Scale

The paper highlights the complex issues involved in impact dynamics at nano-scale, prevalent in MEMS. The role of protective layers on the silicon substrate is investigated. It is found that the expected viscoelastic behavior of these layers is not activated due to the very short (almost instantaneous) impact times.

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