High resolution deep level transient spectroscopy and process-induced defects in silicon

2004 ◽  
Vol 114-115 ◽  
pp. 307-311 ◽  
Author(s):  
J.H. Evans-Freeman ◽  
D. Emiroglu ◽  
K.D. Vernon-Parry
Keyword(s):  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy ◽  
Induced Defects

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects
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