Investigation of process induced defects in SiGe/Si heterojunction bipolar transistors by deep-level transient spectroscopy

1998 ◽  
Vol 16 (3) ◽  
pp. 1745 ◽  
Author(s):  
A. Souifi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Bipolar Transistors ◽  
Transient Spectroscopy ◽  
Induced Defects

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 489-492 ◽  
Author(s):  
Atsuo Kawasuso ◽  
Michael Weidner ◽  
F. Redmann ◽  
Thomas Frank ◽  
Reinhard Krause-Rehberg ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects

CW Laser Induced Deep Level Defects in Virgin Silicon.

1981 ◽  
Vol 4 ◽  
Author(s):  
A. Chantre ◽  
M. Kechouane ◽  
D. Bois
Keyword(s):  
High Temperature ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Solid Phase ◽  
Deep Level ◽  
Deep Levels ◽  
Cw Laser ◽  
Temperature State ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTDeep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

scholarly journals Electrically Active Defects In Solar Cells Based On Amorphous Silicon/Crystalline Silicon Heterojunction After Irradiation By Heavy Xe Ions

2015 ◽  
Vol 66 (6) ◽  
pp. 323-328 ◽  
Author(s):  
Ladislav Harmatha ◽  
Miroslav Mikolášek ◽  
L’ubica Stuchlíková ◽  
Arpád Kósa ◽  
Milan Žiška ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Heavy Ions ◽  
Deep Level Transient Spectroscopy ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Different Types ◽  
Radiation Induced ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Abstract The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

scholarly journals M-Center in Neutron Irradiated 4H-SiC

2021 ◽  
Author(s):  
Ivana Capan ◽  
Tomislav Brodar ◽  
Takahiro Makino ◽  
Vladimir Radulovic ◽  
Luka Snoj
Keyword(s):  
Fast Neutron ◽  
Neutron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Fast Neutron Irradiation ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

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