The photoluminescence characteristics of GaAs surface by plasma treatment

2021 ◽  
Vol 134 ◽  
pp. 106050
Author(s):  
Jinghui Wang ◽  
Xin Gao ◽  
Yuanhong Cai ◽  
Zhihao Wang ◽  
Zhongliang Qiao ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Gaas Surface

NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor

1993 ◽  
Vol 318 ◽  
Author(s):  
Kyoung Wan Park ◽  
Seong Jae Lee ◽  
Mincheol Shin ◽  
El-Hang Lee
Keyword(s):  
High Temperature ◽  
Plasma Treatment ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Plasma Reactor ◽  
Gaas Surface ◽  
Ex Situ ◽  
Native Oxide ◽  
Long Term Stability

ABSTRACTNH3-plasma treatment has been used for passivation of native-oxide-contaminated GaAs surface. Ex situ band-gap photoluminescence(PL) measurement shows enhanced intensity for the treated surfaces in direct plasma. Auger electron spectroscopy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to speculate that the graded GaN thin layer was formed on the surface. Long-term stability of the enhanced PL intensity is attributed to the formation of GaN on the surface.

scholarly journals Effects on the Surface and Luminescence Properties of GaAs by SF6 Plasma Passivation

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 339 ◽  
Author(s):  
Yumeng Xu ◽  
Xin Gao ◽  
Xiaolei Zhang ◽  
Zhongliang Qiao ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Treatment Time ◽  
Gaas Surface ◽  
Chamber Pressure ◽  
Rf Plasma ◽  
Force Microscopy ◽  
Plasma Passivation ◽  
Plasma Treatment Time ◽  
The Stability

The passivation effects of the SF6 plasma on a GaAs surface has been investigated by using the radio frequency (RF) plasma method. The RF’s power, chamber pressure, and plasma treatment time are optimized by photoluminescence (PL), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The PL intensity of passivated GaAs samples is about 1.8 times higher than those which are untreated. The oxide traps and As-As dimers can be removed effectively by using SF6 plasma treatment, and Ga-F can form on the surface of GaAs. It has also been found that the stability of the passivated GaAs surface can be enhanced by depositing SiO2 films onto the GaAs surface. These indicate that the passivation of GaAs surfaces can be achieved by using SF6 plasma treatment.

Removal of GaAs surface contaminants using H2electron cyclotron resonance plasma treatment followed by Cl2chemical etching

1993 ◽  
Vol 62 (21) ◽  
pp. 2658-2660 ◽  
Author(s):  
M. Hong ◽  
R. S. Freund ◽  
K. D. Choquette ◽  
H. S. Luftman ◽  
J. P. Mannaerts ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Cyclotron Resonance ◽  
Gaas Surface ◽  
Surface Contaminants ◽  
Resonance Plasma

Effect of Oxygen Plasma Treatment on Monolayer Self-assembled SiO2 Nanosphere Thin Films on GaAs Surface

2020 ◽  
Vol 41 (3) ◽  
pp. 253-258
Author(s):  
王智栋 WANG Zhi-dong ◽  
刘 云 LIU Yun ◽  
彭新村 PENG Xin-cun ◽  
邹继军 ZOU Ji-jun ◽  
朱志甫 ZHU Zhi-fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Gaas Surface ◽  
Oxygen Plasma Treatment ◽  
Self Assembled ◽  
Effect Of Oxygen

Activity of Ag Nanoparticle Supported Zeolite after Plasma Treatment

2013 ◽  
Vol 133 (3) ◽  
pp. 144-145 ◽  
Author(s):  
Yoshiyuki Teramoto ◽  
Hyun-Ha Kim ◽  
Atsushi Ogata ◽  
Nobuaki Negishi
Keyword(s):  
Plasma Treatment ◽  
Ag Nanoparticle

Investigation of Plasma Treatment Conditions for Wafer-Scale Room-Temperature Bonding Using Ultrathin Au Films in Ambient Air

2019 ◽  
Vol 139 (7) ◽  
pp. 217-218
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Room Temperature ◽  
Ambient Air ◽  
Wafer Scale ◽  
Treatment Conditions

THE MODIFICATION OF PAPER INDUCED BY RADIO FREQUENCY AND MICROWAVE PLASMA TREATMENT

2007 ◽  
Vol 11 (4) ◽  
pp. 593-600
Author(s):  
V. V. Azharonok ◽  
I. I. Filatova ◽  
A. P. Dostanko ◽  
S. V. Bordusov ◽  
Yu. S. Shynkevich
Keyword(s):  
Radio Frequency ◽  
Plasma Treatment ◽  
Microwave Plasma
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