NH3-Plasma Treatment of Gaas Surface at High Temperature in Remote Plasma and Direct Plasma Reactor

1993 ◽  
Vol 318 ◽  
Author(s):  
Kyoung Wan Park ◽  
Seong Jae Lee ◽  
Mincheol Shin ◽  
El-Hang Lee
Keyword(s):  
High Temperature ◽  
Plasma Treatment ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Plasma Reactor ◽  
Gaas Surface ◽  
Ex Situ ◽  
Native Oxide ◽  
Long Term Stability

ABSTRACTNH3-plasma treatment has been used for passivation of native-oxide-contaminated GaAs surface. Ex situ band-gap photoluminescence(PL) measurement shows enhanced intensity for the treated surfaces in direct plasma. Auger electron spectroscopy(AES) shows that the treated surface contains nitrogen atoms but no arsenic atoms, which leads us to speculate that the graded GaN thin layer was formed on the surface. Long-term stability of the enhanced PL intensity is attributed to the formation of GaN on the surface.

ATI 6-2-4-2

Alloy Digest ◽  
2020 ◽  
Vol 69 (8) ◽  
Keyword(s):  
Tensile Strength ◽  
Titanium Alloy ◽  
High Temperature ◽  
Creep Strength ◽  
High Strength ◽  
Heat Treating ◽  
Good Combination ◽  
Long Term Stability ◽  
Temperature Performance

Abstract ATI 6-2-4-2 is a near-alpha, high strength, titanium alloy that exhibits a good combination of tensile strength, creep strength, toughness, and long-term stability at temperatures up to 425 °C (800 °F). Silicon up to 0.1% frequently is added to improve the creep resistance of the alloy. This datasheet provides information on composition, physical properties, hardness, and tensile properties as well as creep. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: Ti-169. Producer or Source: ATI.

scholarly journals CO Detection Investigation at High Temperature by SiC MISFET Metal/Oxide Gas Sensors

Proceedings ◽  
2021 ◽  
Vol 56 (1) ◽  
pp. 41
Author(s):  
Lida Khajavizadeh ◽  
Anita Lloyd Spetz ◽  
Mike Andersson
Keyword(s):  
High Temperature ◽  
Gas Sensors ◽  
Elevated Temperatures ◽  
Long Term Stability ◽  
Stability Performance ◽  
Catalytic Metal ◽  
Co Detection ◽  
Effect Transistor ◽  
Metal Oxide Gas Sensors

In order to investigate the necessary device improvements for high-temperature CO sensing with SiC metal insulator semiconductor field effect transistor (MISFET)-based chemical gas sensors, devices employing, as the gas-sensitive gate contact, a film of co-deposited Pt/Al2O3 instead of the commonly used catalytic metal-based contacts were fabricated and characterized for CO detection at elevated temperatures and different CO and O2 levels. It can be concluded that the sensing mechanism at elevated temperatures correlates with oxygen removal from the sensor surface rather than the surface CO coverage as observed at lower temperatures. The long-term stability performance was also shown to be improved compared to that of previously studied devices.

scholarly journals Investigation on the Cause of the SO2 Generation during Hot Gas Desulfurization (HGD) Process

Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 985
Author(s):  
Byungwook Hwang ◽  
Jung Hwan Kim ◽  
Doyeon Lee ◽  
Hyungseok Nam ◽  
Ha Na Kim ◽  
...  
Keyword(s):  
High Temperature ◽  
Combined Cycle ◽  
Integrated Gasification Combined Cycle ◽  
H2s Removal ◽  
Long Term Stability ◽  
Product Gas ◽  
Integrated Gasification ◽  
Hot Gas Desulfurization ◽  
So2 Gas

In the integrated gasification combined cycle (IGCC) process, the sulfur compounds present in coal are converted to hydrogen sulfide (H2S) when the coal is gasified. Due to its harmful effects on sorbent/solvent and environmental regulations, H2S needs to be removed from the product gas stream. To simulate the H2S removal process, desulfurization was carried out using a dry sorbent as a fluidizing material within a bubbling, high-temperature fluidized bed reactor. The ZnO-based sorbent showed not only an excellent capacity of H2S removal but also long-term stability. However, unexpected SO2 gas at a concentration of several hundred ppm was detected during the desulfurization reaction. Thus, we determined that there is an unknown source that supplies oxygen to ZnS, and identified the oxygen supplier through three possibilities: oxygen by reactant (fresh sorbent, ZnO), byproduct (ZnSO4), and product (H2O). From the experiment results, we found that the H2O produced from the reaction reacts with ZnS, resulting in SO2 gas being generated during desulfurization. The unknown oxygen source during desulfurization was deduced to be oxygen from H2O produced during desulfurization. That is, the oxygen from produced H2O reacts with ZnS, leading to SO2 generation at high temperature.

Development of a 300°C capable SiC based operational amplifier

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Long Term Stability ◽  
Silicon Silicon

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.

scholarly journals Long-Term Stability and Durability of High-Temperature Alloys

JOM ◽  
2014 ◽  
Vol 66 (12) ◽  
pp. 2476-2477
Author(s):  
Chantal K. Sudbrack ◽  
Mark C. Hardy
Keyword(s):  
High Temperature ◽  
Term Stability ◽  
Long Term Stability ◽  
High Temperature Alloys

AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES

1989 ◽  
Vol 03 (11) ◽  
pp. 1655-1660 ◽  
Author(s):  
E.P. VALCHEVA ◽  
K.G. GERMANOVA ◽  
S.S. GEORGIEV
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Deposition Temperature ◽  
Auger Electron ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Native Oxide ◽  
Interfacial Region ◽  
Interface Formation

Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.

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