Tunneling FET based on defect-free, vacancy-defected, and passivated monolayer PtSe2 channel: A first principles study

2022 ◽  
Vol 138 ◽  
pp. 106258
Author(s):  
Ehsan Norouzzadeh ◽  
Saeed Mohammadi ◽  
Mahdi Moradinasab
2018 ◽  
Vol 32 (21) ◽  
pp. 1850232
Author(s):  
Juan Hua ◽  
Ying Li ◽  
Yue-Lin Liu

We have investigated the effect of impurity X (X = C and O) atoms on the behavior of hydrogen in vanadium, which is an ideal structural material for nuclear fusion reactors, by first-principles calculations. We found that (1) in bulk V, the interaction between an interstitial H atom and an X atom is repulsive, and the interaction with O is much stronger than that with C. (2) The X–vacancy (vac) cluster can act as a center for capturing H in V. The C-vac cluster can trap as many as two H atoms, while the O–vac cluster can capture up to four H atoms. (3) C and O impurities can effectively decrease the trapping energy of a single H atom in a vacancy. The H-trapping energies in the C–vac and O–vac complexes are 0.88 eV and 0.46 eV, respectively, both of which are lower than those in the X-free vacancy. (4) Both H–X and X-metal interactions affect the H solubility in V. The above results provide important information for application of vanadium as a structural material for nuclear fusion tokamaks.


2020 ◽  
Vol 22 (36) ◽  
pp. 20914-20921 ◽  
Author(s):  
Rajmohan Muthaiah ◽  
Jivtesh Garg

We report novel pathways to significantly enhance the thermal conductivity at nanometer length scales in boron phosphide through biaxial strain.


2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB35 ◽  
Author(s):  
Tomoe Yayama ◽  
Anh Khoa Augustin Lu ◽  
Tetsuya Morishita ◽  
Takeshi Nakanishi

2013 ◽  
Vol 568-569 ◽  
pp. 202
Author(s):  
Shengli Zhang ◽  
Yonghong Zhang ◽  
Shiping Huang ◽  
Peng Wang ◽  
Huiping Tian

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