Moisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states

Nano Energy ◽  
2020 ◽  
Vol 71 ◽  
pp. 104628 ◽  
Author(s):  
Ye Tao ◽  
Zhongqiang Wang ◽  
Haiyang Xu ◽  
Wentao Ding ◽  
Xiaoning Zhao ◽  
...  
2019 ◽  
Vol 488 ◽  
pp. 30-35 ◽  
Author(s):  
Minghua Li ◽  
Shuanghai Wang ◽  
Shijie Zhang ◽  
Shuai Fang ◽  
Guonan Feng ◽  
...  

2020 ◽  
Vol 128 (16) ◽  
pp. 165303
Author(s):  
Xiulan Xu ◽  
Guonan Feng ◽  
Jintao Liu ◽  
Ronggui Zhu ◽  
Xinyan Yang ◽  
...  

2014 ◽  
Vol 104 (5) ◽  
pp. 052413 ◽  
Author(s):  
Xi Chen ◽  
Chun Feng ◽  
Zheng Long Wu ◽  
Feng Yang ◽  
Yang Liu ◽  
...  

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng Meng ◽  
Yuanwei Sun ◽  
Yuehui Li ◽  
Qichang An ◽  
Zhenzhen Wang ◽  
...  

AbstractThe d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.


2021 ◽  
Author(s):  
Xiao‐Long Zhang ◽  
Peng‐Peng Yang ◽  
Ya‐Rong Zheng ◽  
Yu Duan ◽  
Shao‐Jin Hu ◽  
...  

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