Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

Spatially resolved electrical measurements of SiO2 gate oxides using atomic force microscopy

1993 ◽  
Vol 62 (7) ◽  
pp. 786-788 ◽  
Author(s):  
M. P. Murrell ◽  
M. E. Welland ◽  
S. J. O’Shea ◽  
T. M. H. Wong ◽  
J. R. Barnes ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Measurements ◽  
Gate Oxides ◽  
Force Microscopy ◽  
Spatially Resolved ◽  
Atomic Force

Investigations of Local Electrical Characteristics of a Pentacene Thin Film by Point-Contact Current Imaging Atomic Force Microscopy

2012 ◽  
Vol 51 (8S3) ◽  
pp. 08KB05 ◽  
Author(s):  
Tomoharu Kimura ◽  
Yuji Miyato ◽  
Kei Kobayashi ◽  
Hirofumi Yamada ◽  
Kazumi Matsushige
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Point Contact ◽  
Electrical Characteristics ◽  
Force Microscopy ◽  
Atomic Force

Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

2010 ◽  
Vol 644 ◽  
pp. 109-112
Author(s):  
N. Muñoz Aguirre ◽  
J. Eduardo Rivera-López ◽  
L. Martínez Pérez ◽  
Pedro A. Tamayo Meza
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spray Pyrolysis Technique ◽  
Water Mist ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

Properties of InSnTaO Films as Transparent Conductive Oxides

2012 ◽  
Vol 534 ◽  
pp. 197-200
Author(s):  
Bo Zhang
Keyword(s):  
Lower Surface ◽  
Electrical Characteristics ◽  
Direct Transition ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Tantalum Target ◽  
Comprehensive Properties ◽  
Atomic Force ◽  
Ta Doping ◽  
Ito Films

InSnTaO films were deposited on glass substrates by magnetron sputtering with ITO target and tantalum target. X-ray diffractometer (XRD) and atomic force microscopy (AFM) revealed that InSnTaO films had better crystalline structure, larger grain size and lower surface roughness than ITO films. Ta-doping remarkably improved the optical-electrical characteristics. The films showed obvious Burstin-Moss effect with substrate temperature. Moreover, the direct transition model showed wider optical band gap of InSnTaO films than that of ITO films. As a result, InSnTaO films prepared by co-sputtering revealed better comprehensive properties than traditional ITO films.

Electronic Transport Properties of Chemical Gas Sensor Using Conducting Polymer PAni

2006 ◽  
Vol 326-328 ◽  
pp. 1363-1366 ◽  
Author(s):  
Jae Jong Lee ◽  
Soo Yeon Park ◽  
Seung Woo Lee ◽  
In Deok Jeon
Keyword(s):  
Conducting Polymer ◽  
Isopropyl Alcohol ◽  
Low Noise ◽  
Electrical Measurements ◽  
Isobutyl Ketone ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Measured Distance ◽  
Lift Off

The conducting polymer PAni is coated on Au electrode sample by spin coater on 500rpm and 3000rpm for 5sec and 30sec. Then, it was drying 10min at 180C. The layer thickness was 140~200nm. The electrodes were fabricated the resist pattern by electron beam writing machine which was performed on a Raith75 e-Line on the PMMA 950K, thickness 100nm. The electrodes were written at an electron does of 200uAs/cm2 and developed for 40sec in a 1:3 MIBK (methyl-isobutyl-ketone): IPA (isopropyl alcohol) solution. Metal lift-off of the PMMA in acetone was preceded by an e-beam evaporation consisting of 50Å Cr and 250Å Au. Electrical measurements were performed on low-noise commercial probe stations equipped. We measured distance between the electrodes ranges from a few tens of nanometer to hundreds nanometer by AFM (Atomic Force Microscopy) which was done with silicon tips in non-contact mode on a PSIA, XE-100.

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 706-709 ◽  
Author(s):  
Marilena Vivona ◽  
Kassem Al Assaad ◽  
Véronique Soulière ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diodes ◽  
Sample Surface ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Conductive Atomic Force Microscopy ◽  
Near Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After

We report on the electrical characteristics of Ni/4H-SiC Schottky contacts fabricated on a Ge-doped 4H-SiC epilayer. The morphology and the current mapping carried out by conductive atomic force microscopy on the epilayer allowed observing nanoscale preferential conductive paths on the sample surface. The electrical characteristics of Ni contacts have been studied before and after a rapid thermal annealing process. A highly inhomogeneous Schottky barrier was observed in as-deposited diodes, probably related to the surface electrical inhomogeneities of the 4H-SiC epilayer. A significant improvement of the Schottky diodes characteristics was achieved after annealing at 700°C, leading to the consumption of the near surface epilayer region by Ni/4H-SiC reaction. After this treatment, the temperature behavior of the ideality factor and Schottky barrier height was comparable to that observed on commercial 4H-SiC material.

Comparison of Surface Cleaning Processes for Diamond C(001)

1994 ◽  
Vol 339 ◽  
Author(s):  
Peter K. Baumann ◽  
T. P. Humphreys ◽  
R. J. Nemanich
Keyword(s):  
Chromic Acid ◽  
Surface Cleaning ◽  
Electrochemical Process ◽  
Diamond Surface ◽  
Chemical Cleaning ◽  
Cu Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Acid Etch ◽  
Semiconducting Diamond

ABSTRACTTwo wet chemical cleaning processes (a conventional chromic acid clean and an electrochemical etch) and a H-plasma exposure have been employed to clean natural type lib semiconducting diamond C(001) wafers. The effects of these processes on the diamond surface have been assessed and compared. As evidenced by Auger electron spectroscopy (AES), an oxygen free surface could be obtained following annealing to 900°C for the electrochemical process compared to 1050°C for the chromic acid etch. In addition, the technique of Atomic Force Microscopy (AFM) demonstrated the presence of oriented pits on the surface of samples electrochemically etched for long times at high currents. Furthermore, heteroepitaxial Cu films have been grown on the diamond substrates cleaned by a process as described above. By means of Ultraviolet Photoemission Spectroscopy (UPS) a Schottky barrier height of ΦB≊ 1.0 eV was measured. Furthermore, the presence a negative electron affinity (NEA) has been determined.

Microstructural and Electrical Properties of La Doped Ba1划xSrxTiO3 Thin Films For Tunable Microwave Device Applications

2000 ◽  
Vol 655 ◽  
Author(s):  
M.W. Cole ◽  
P.C. Joshi ◽  
E. Ngo ◽  
C.W. Hubbard ◽  
U. Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Insulator Metal ◽  
Device Applications ◽  
Bst Films ◽  
La Doped

AbstractWe have investigated the structural, compositional, interfacial, surface morphological and dielectric properties of Ba0.6Sr0.4TiO3 solid solution thin films La doped from 0 to 10 mol%. The doped thin films were prepared by the metalorganic solution deposition technique using carboxylate-alkoxide precursors. After post-deposition annealing in oxygen ambient at 750 °C the films were characterized via x-ray diffraction, Auger electron microscopy, field emission scanning electron microscopy, and atomic force microscopy. The electrical measurements were achieved in the metal-insulator-metal (MIM) configuration with Pt as the top and bottom electrode. Our results demonstrated that La doping had a strong effect on the films microstructural, dielectric and insulating properties. Specifically, 1 mol% La doped BST films exhibited a lower dielectric constant, 283 and higher resistivity 31.4×1013 W-cm with respect to that of undoped BST. The loss tangent and tunability (at 100 kHz) of the 1 mol% La doped BST films were 0.019 and 21% (at E=300kV/cm) respectively.

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