Characterization of the CLYC detector for neutron and photon detection

2014 ◽  
Vol 736 ◽  
pp. 124-127 ◽  
Author(s):  
M.M. Bourne ◽  
C. Mussi ◽  
E.C. Miller ◽  
S.D. Clarke ◽  
S.A. Pozzi ◽  
...  
Keyword(s):  
Photon Detection

scholarly journals Iron-Based Superconducting Nanowires: Electric Transport and Voltage-Noise Properties

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 862
Author(s):  
Sergio Pagano ◽  
Nadia Martucciello ◽  
Emanuele Enrico ◽  
Eugenio Monticone ◽  
Kazumasa Iida ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Photon ◽  
Intrinsic Noise ◽  
Electrical Contacts ◽  
Single Photon Detection ◽  
Electric Transport ◽  
Superconducting Nanowires ◽  
Photon Detection ◽  
Iron Based

The discovery of iron-based superconductors paved the way for advanced possible applications, mostly in high magnetic fields, but also in electronics. Among superconductive devices, nanowire detectors have raised a large interest in recent years, due to their ability to detect a single photon in the visible and infrared (IR) spectral region. Although not yet optimal for single-photon detection, iron-based superconducting nanowire detectors would bring clear advantages due to their high operating temperature, also possibly profiting of other peculiar material properties. However, there are several challenges yet to be overcome, regarding mainly: fabrication of ultra-thin films, appropriate passivation techniques, optimization of nano-patterning, and high-quality electrical contacts. Test nanowire structures, made by ultra-thin films of Co-doped BaFe2As2, have been fabricated and characterized in their transport and intrinsic noise properties. The results on the realized nanostructures show good properties in terms of material resistivity and critical current. Details on the fabrication and low temperature characterization of the realized nanodevices are presented, together with a study of possible degradation phenomena induced by ageing effects.

scholarly journals NUV-Sensitive Silicon Photomultiplier Technologies Developed at Fondazione Bruno Kessler

Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 308 ◽  
Author(s):  
Alberto Gola ◽  
Fabio Acerbi ◽  
Massimo Capasso ◽  
Marco Marcante ◽  
Alberto Mazzi ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Direct Detection ◽  
Liquid Argon ◽  
Correlated Noise ◽  
Silicon Photomultiplier ◽  
Photon Detection ◽  
Positron Emission ◽  
Photon Detection Efficiency ◽  
Increased Sensitivity

Different applications require different customizations of silicon photomultiplier (SiPM) technology. We present a review on the latest SiPM technologies developed at Fondazione Bruno Kessler (FBK, Trento), characterized by a peak detection efficiency in the near-UV and customized according to the needs of different applications. Original near-UV sensitive, high-density SiPMs (NUV-HD), optimized for Positron Emission Tomography (PET) application, feature peak photon detection efficiency (PDE) of 63% at 420 nm with a 35 um cell size and a dark count rate (DCR) of 100 kHz/mm2. Correlated noise probability is around 25% at a PDE of 50% at 420 nm. It provides a coincidence resolving time (CRT) of 100 ps FWHM (full width at half maximum) in the detection of 511 keV photons, when used for the readout of LYSO(Ce) scintillator (Cerium-doped lutetium-yttrium oxyorthosilicate) and down to 75 ps FWHM with LSO(Ce:Ca) scintillator (Cerium and Calcium-doped lutetium oxyorthosilicate). Starting from this technology, we developed three variants, optimized according to different sets of specifications. NUV-HD–LowCT features a 60% reduction of direct crosstalk probability, for applications such as Cherenkov telescope array (CTA). NUV-HD–Cryo was optimized for cryogenic operation and for large photosensitive areas. The reference application, in this case, is the readout of liquid, noble-gases scintillators, such as liquid Argon. Measurements at 77 K showed a remarkably low value of the DCR of a few mHz/mm2. Finally, vacuum-UV (VUV)-HD features an increased sensitivity to VUV light, aiming at direct detection of photons below 200 nm. PDE in excess of 20% at 175 nm was measured in liquid Xenon. In the paper, we discuss the specifications on the SiPM related to different types of applications, the SiPM design challenges and process optimizations, and the results from the experimental characterization of the different, NUV-sensitive technologies developed at FBK.

Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices

2021 ◽  
Author(s):  
Remi Helleboid ◽  
Denis Rideau ◽  
Isobel Nicholson ◽  
Norbert Moussy ◽  
Olivier Saxod ◽  
...  
Keyword(s):  
Detection Efficiency ◽  
Photon Detection ◽  
Photon Detection Efficiency ◽  
Comprehensive Modeling

scholarly journals 0.16 µm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise

Sensors ◽  
2018 ◽  
Vol 18 (11) ◽  
pp. 3763 ◽  
Author(s):  
Mirko Sanzaro ◽  
Fabio Signorelli ◽  
Paolo Gattari ◽  
Alberto Tosi ◽  
Franco Zappa
Keyword(s):  
Detection Efficiency ◽  
Cost Effective ◽  
Digital Processing ◽  
Correlated Noise ◽  
Silicon Photomultipliers ◽  
Photon Detection ◽  
Systems On Chip ◽  
Photon Detection Efficiency ◽  
On Chip

Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 µm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.

scholarly journals Characterization of the thin-film NbN superconductor for single-photon detection by transport measurements

2013 ◽  
Vol 87 (18) ◽  
Author(s):  
Shi-Zeng Lin ◽  
Oscar Ayala-Valenzuela ◽  
Ross D. McDonald ◽  
Lev N. Bulaevskii ◽  
Terry G. Holesinger ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection ◽  
Transport Measurements

Characterization of single photon detection in solid state photomultipliers using multi-photon transit time histograms

2011 ◽  
Vol 6 (02) ◽  
pp. P02013-P02013 ◽  
Author(s):  
S Vinogradov ◽  
T Vinogradova ◽  
L Futlik ◽  
E Levin ◽  
E Shelegeda ◽  
...  
Keyword(s):  
Solid State ◽  
Transit Time ◽  
Single Photon ◽  
Single Photon Detection ◽  
Photon Detection

scholarly journals Automated Characterization of Single-Photon Avalanche Photodiode

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Aina Mardhiyah M. Ghazali ◽  
Audun Nystad Bugge ◽  
Sebastien Sauge ◽  
Vadim Makarov
Keyword(s):  
Detection Efficiency ◽  
Single Photon ◽  
Photon Counting ◽  
Avalanche Photodiode ◽  
Dark Count ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Photon Detection ◽  
Photon Detection Efficiency

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode) (PerkinElmer C30902SH) komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V) pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW), kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD); single photon detector; photon counting; experiment automation

scholarly journals Characterization of a novel avalanche photodiode for single photon detection in VIS-NIR range

2010 ◽  
Vol 18 (16) ◽  
pp. 17448 ◽  
Author(s):  
M. Stipčević ◽  
H. Skenderović ◽  
D. Gracin
Keyword(s):  
Single Photon ◽  
Avalanche Photodiode ◽  
Single Photon Detection ◽  
Photon Detection
Sign in / Sign up

Export Citation Format

Share Document