Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy

AbstractX-ray diffraction was used in situ to study the phase transitions which occurred in 1500 Å Au/GaAs(100) upon heating and cooling. The reaction between Au and GaAs took the form Au + Ga → α Au-Ga. Upon heating, α Au-Ga completely dissolved in liquid Au-Ga. Upon subsequent cooling, β Au-Ga (or Au7Ga2) formed. In 1 atm of nitrogen, phase transitions were observed reversibly at 525 ± 25°C (due to the complete dissolution of α Au-Ga upon heating) and 415 ± 5°C (due to the peritectic transformation of β Au-Ga to α Au-Ga and liquid Au-Ga upon heating). In a vacuum of 425 μ (0.031 Kg/2m) similar phase transitions were observed at 425 ± 25°C and 387 ± 13°C, respectively.

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Gallium arsenide (GaAs), data from electron loss, yield and X-ray emission spectroscopy

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties - Landolt-Börnstein - Group III Condensed Matter ◽

10.1007/10832182_220 ◽

2005 ◽

pp. 1-4

Author(s):

Keyword(s):

Gallium Arsenide ◽

Emission Spectroscopy ◽

Electron Loss ◽

X Ray

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X‐ray photoelectron spectroscopic study of the interactions of fluorine ions with gallium arsenide

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.578254 ◽

1992 ◽

Vol 10 (4) ◽

pp. 1365-1370 ◽

Cited By ~ 10

Author(s):

L. R. Williston ◽

I. Bello ◽

W. M. Lau

Keyword(s):

Gallium Arsenide ◽

Spectroscopic Study ◽

X Ray ◽

Fluorine Ions

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Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-312-333 ◽

1993 ◽

Vol 312 ◽

Author(s):

Werner Möhling ◽

H. Weishart ◽

E. Bauser

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Crystal Surface ◽

Double Crystal ◽

Growth Interface ◽

Growth Step ◽

Burgers Vector ◽

X Ray ◽

Back Reflection

AbstractDislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

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Noise analysis of gallium arsenide pixel X-ray detectors coupled to ultra-low noise electronics

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2003.811280 ◽

2003 ◽

Vol 50 (3) ◽

pp. 723-728 ◽

Cited By ~ 23

Author(s):

G. Bertuccio ◽

R. Casiraghi ◽

D. Maiocchi ◽

A. Owens ◽

M. Bavdaz ◽

...

Keyword(s):

Gallium Arsenide ◽

Noise Analysis ◽

Low Noise ◽

X Ray ◽

Ultra Low Noise

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Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.1015 ◽

2005 ◽

Vol 483-485 ◽

pp. 1015-1020 ◽

Cited By ~ 5

Author(s):

Giuseppe Bertuccio ◽

Simona Binetti ◽

S. Caccia ◽

R. Casiraghi ◽

Antonio Castaldini ◽

...

Keyword(s):

High Performance ◽

Room Temperature ◽

Collection Efficiency ◽

High Energy ◽

Beta Particle ◽

High Energy Resolution ◽

Charge Collection Efficiency ◽

X Ray ◽

Current Densities ◽

Full Charge

High performance SiC detectors for ionising radiation have been designed, manufactured and tested. Schottky junctions on low-doped epitaxial 4H-SiC with leakage current densities of few pA/cm2 at room temperature has been realised at this purpose. The epitaxial layer has been characterised at different dose of radiations in order to investigate the SiC radiation hardness. The response of the detectors to alpha and beta particle and to soft X-ray have been measured. High energy resolution and full charge collection efficiency have been successfully demonstrated.

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Epitaxial Lateral Overgrowth of Gallium Arsenide Studied by Synchrotron Topography

MRS Proceedings ◽

10.1557/proc-570-181 ◽

1999 ◽

Vol 570 ◽

Cited By ~ 1

Author(s):

R. Rantamäki ◽

T. Tuomi ◽

Z. R. Zytkiewicz ◽

D. Dobosz ◽

P. J. Mcnally ◽

...

Keyword(s):

Gallium Arsenide ◽

Surface Profile ◽

Epitaxial Lateral Overgrowth ◽

Simulation Data ◽

X Ray ◽

Lateral Overgrowth ◽

Lattice Planes ◽

Section Topographs ◽

Transmission And Reflection ◽

Good Agreement

ABSTRACTSynchrotron x-ray topographs of GaAs epitaxial lateral overgrowth (ELO) samples are made both in transmission and reflection geometries. The topographs show that the bending of the ELO layers is visible in most geometries. A simulation of the topographic images is implemented taking into account only the orientational contrast. Simulated back reflection section topographs are in good agreement with the experimental ones. The shape of the lattice planes in an ELO layer is calculated using the simulation data and compared to the measured surface profile of the same ELO stripe.

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