Effect of heat treatment on helium trapping in vanadium alloy at high ion implantation fluence

2006 ◽  
Vol 243 (1) ◽  
pp. 83-86 ◽  
Author(s):  
X. Liu ◽  
T. Yamada ◽  
Y. Yamauchi ◽  
Y. Hirohata ◽  
T. Hino
Keyword(s):  
Heat Treatment ◽  
Ion Implantation ◽  
Vanadium Alloy ◽  
Implantation Fluence

Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation

2015 ◽  
Vol 242 ◽  
pp. 271-276
Author(s):  
Sho Shirasawa ◽  
Koji Sueoka
Keyword(s):  
Heat Treatment ◽  
Binding Energy ◽  
Ion Implantation ◽  
Point Defects ◽  
First Principles ◽  
First Principles Calculation ◽  
Manufacturing Processes ◽  
Intrinsic Point Defects

Fe, Ni and Cu atoms diffuse very quickly in Si and are the main targets for metal gettering. W, Hf, and Mo atoms, for example, which diffuse very slowly in Si have also recently become gettering targets in addition to these metals. Therefore, proximity gettering techniques by using ion implantation are being considered. Not only implanted elements but intrinsic point defects exist and form several complexes after the heat treatment for Si crystal recovery. This research systematically investigated the binding energy of twelve important metals (Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo, Hf, Ta, and W) with implanted dopants (B, C, P, and As) and their complexes with intrinsic point defects (vacancies (Vs) and self-interstitials (Is)) by using first principles calculation. These data should be useful in the design of proximity gettering in LSI manufacturing processes.

Silver Negative-Ion Implantation into Thermally Grown Thin SiO2Film on Si Substrate and Heat Treatment for Formation of Silver Nanoparticles

2007 ◽  
Vol 46 (9B) ◽  
pp. 6260-6266 ◽  
Author(s):  
Nobutoshi Arai ◽  
Hiroshi Tsuji ◽  
Kouichirou Adachi ◽  
Hiroshi Kotaki ◽  
Yasuhito Gotoh ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Silver Nanoparticles ◽  
Ion Implantation ◽  
Negative Ion ◽  
Si Substrate ◽  
Thermally Grown

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

HARDTEM

Alloy Digest ◽  
1963 ◽  
Vol 12 (6) ◽  
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Heat Treating ◽  
Vanadium Alloy ◽  
Die Steel ◽  
Temperature Performance

Abstract HARDTEM is a balanced chromium-molybdenum-vanadium alloy die steel furnished in the prehardened condition ready for sinking without further heat treatment by the user. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: TS-134. Producer or source: Heppenstall Company.

scholarly journals Порообразование в тонких пленках германия при имплантации ионов Ge-=SUP=-+-=/SUP=-

2020 ◽  
Vol 46 (14) ◽  
pp. 33
Author(s):  
Н.М. Лядов ◽  
Т.П. Гаврилова ◽  
С.М. Хантимеров ◽  
В.В. Базаров ◽  
Н.М. Сулейманов ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Ultrahigh Vacuum ◽  
Germanium Films ◽  
Fluence Range ◽  
Scanning Electron ◽  
Implantation Fluence

The results of a study of the morphology of the nanostructured by ion implantation germanium films are presented. The film samples were grown using the magnetron sputtering method in an ultrahigh vacuum and then were irradiated with Ge+ ions of 40 keV energy in the fluence range of (1.8–8)×10(16) ion/cm2. Using the scanning electron microscopy it was found that in the implanted germanium volume the vacancy complexes with a diameter of 50–150 nm gradually form and come to the surface upon reaching a certain implantation fluence, forming a developed relief of the irradiated films.

Wear Improvement in Ti-6Al-4V by Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
R.G. Vardiman
Keyword(s):  
Heat Treatment ◽  
Wear Resistance ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Dense Array ◽  
Nitrogen Implantation ◽  
Carbide Layer ◽  
Ball On Disc

ABSTRACTThe friction and wear of Ti-6Al-4V are found to be sharply reduced by carbon implantation followed by heat treatment. Optimum wear resistance is developed at 400° C, at which the microstructure of the implanted layer shows a dense array of TiC precipitates up to 60 nm in size. The implanted layer in this case is worn through in a few thousand cycles of the ball on disc test, but by implanting at two energies to achieve a deeper carbide layer, negligible wear was found even after 20,000 cycles. No wear improvement was found for nitrogen implantation.

ZnO nanoparticle creating in a SiO2/Si structure using the Zn ion implantation with subsequent heat treatment

2014 ◽  
Vol 8 (2) ◽  
pp. 332-337 ◽  
Author(s):  
V. V. Privezentsev ◽  
V. S. Kulikauskas ◽  
V. V. Zatekin ◽  
D. V. Petrov ◽  
V. A. Bazhenov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Ion Implantation ◽  
Subsequent Heat Treatment ◽  
Zno Nanoparticle
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