Proportionality of vacancy concentration to ion implantation fluence

2002 ◽  
Vol 92 (10) ◽  
pp. 5852-5855 ◽  
Author(s):  
P. J. Simpson ◽  
S. Szpala
Keyword(s):  
Ion Implantation ◽  
Vacancy Concentration ◽  
Implantation Fluence

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

scholarly journals Порообразование в тонких пленках германия при имплантации ионов Ge-=SUP=-+-=/SUP=-

2020 ◽  
Vol 46 (14) ◽  
pp. 33
Author(s):  
Н.М. Лядов ◽  
Т.П. Гаврилова ◽  
С.М. Хантимеров ◽  
В.В. Базаров ◽  
Н.М. Сулейманов ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Ultrahigh Vacuum ◽  
Germanium Films ◽  
Fluence Range ◽  
Scanning Electron ◽  
Implantation Fluence

The results of a study of the morphology of the nanostructured by ion implantation germanium films are presented. The film samples were grown using the magnetron sputtering method in an ultrahigh vacuum and then were irradiated with Ge+ ions of 40 keV energy in the fluence range of (1.8–8)×10(16) ion/cm2. Using the scanning electron microscopy it was found that in the implanted germanium volume the vacancy complexes with a diameter of 50–150 nm gradually form and come to the surface upon reaching a certain implantation fluence, forming a developed relief of the irradiated films.

Effect of heat treatment on helium trapping in vanadium alloy at high ion implantation fluence

2006 ◽  
Vol 243 (1) ◽  
pp. 83-86 ◽  
Author(s):  
X. Liu ◽  
T. Yamada ◽  
Y. Yamauchi ◽  
Y. Hirohata ◽  
T. Hino
Keyword(s):  
Heat Treatment ◽  
Ion Implantation ◽  
Vanadium Alloy ◽  
Implantation Fluence

GaAs/AlGaAs Quantum Well Mixing Using Low Energy Ion Implantation and Rapid Thermal Annealing

1988 ◽  
Vol 144 ◽  
Author(s):  
B. Elman ◽  
Emil S. Koteles ◽  
P. Melman ◽  
C. A. Armiento
Keyword(s):  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Low Energy ◽  
Exciton Transition ◽  
Transition Energies ◽  
Diffusion Of Vacancies ◽  
Implantation Fluence

ABSTRACTLow energy ion implantation followed by rapid thermal annealing (RTA) was utilized to modify exciton transition energies of MBE- rown GaAs/AlGaAs quantum wells (QW). The samples were irradiated with an 75As ion beam with an energy low enough that the depth of the disordered region was spatially separated from the QWs. After RTA, exciton energies (determined using optical spectroscopy) showed large increases which were dependent on QW widths and the implantation fluence with no significant increases in peak linewidths. These energy shifts were interpreted as resulting from the modification of the shapes of the as-grown QWs from square (abrupt interfaces) to rounded due to enhanced Ga and Al interdiffusion in irradiated areas. These results are similar to our data on the RTA of the same structures capped with SiO2 and are consistent with the model of enhanced intermixing of Al and Ga atoms due to diffusion of vacancies generated near the surface.

scholarly journals Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 316
Author(s):  
Jakub Cajzl ◽  
Pavla Nekvindová ◽  
Anna Macková ◽  
Petr Malinský ◽  
Jiří Oswald ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Nano Crystalline ◽  
Implantation Fluence

Vanadium Oxide Precipitates in Sapphire Formed by Ion Implantation

1997 ◽  
Vol 504 ◽  
Author(s):  
Hiroaki Abe ◽  
Hiroshi Naramoto ◽  
Shunya Yamamoto
Keyword(s):  
Ion Implantation ◽  
Vanadium Oxide ◽  
Damage Evolution ◽  
Vanadium Oxides ◽  
Precipitation Process ◽  
Electron Diffraction Analysis ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Optical And Electronic Properties ◽  
Implantation Fluence

ABSTRACTSome vanadium oxides undergo phase transformations which give rise to attributable for large variations in optical and electronic properties. Since one can expect dynamic rearrangement of implanted species and a distorted lattice due to implantation, we investigated the precipitation process under ion implantation at high temperature. Sapphire samples were implanted with 300-keV V+ ions at temperatures from 470 to 1070 K in a transmission electron microscope interfaced with ion accelerators. Evolution of vanadium oxide precipitates was observed simultaneously. Damage evolution such as dislocation loops and voids were observed at fluences of the order of 1018-1019 and 1020 ions/m2, respectively. At implantation fluence of the order of 1021 ions/m2, dot and plate contrast was observed in addition to radiation damage. Electron diffraction analysis reveals that hexagonal and monoclinic V2O3, tetragonal and monoclinic VO2, and V7O13 precipitates were formed in the substrate depending on the surface normal of the substrate. Some of precipitates were thermally unstable phases. Crystallographic relationship between matrix and the precipitates was investigated as well as the swelling effect both in the substrate and in the precipitates. Temperature dependence reveals precipitation starts at temperature higher than 670 K.

scholarly journals Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

2021 ◽  
Author(s):  
Takuma Kobayashi ◽  
Maximilian Rühl ◽  
Johannes Lehmeyer ◽  
Leonard K.S. Zimmermann ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Vacancy Concentration ◽  
Heavy Ion ◽  
Intrinsic Defect ◽  
High Dose ◽  
Fully Integrated ◽  
Implantation Damage ◽  
Quantum Technology ◽  
Luminescent Centers

Abstract We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.

Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN

2022 ◽  
Author(s):  
Yuta ITOH ◽  
Hirotaka Watanabe ◽  
Yuto Ando ◽  
Emi Kano ◽  
Manato Deki ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Defect Formation ◽  
Vacancy Concentration ◽  
Beam Current ◽  
Dislocation Loops ◽  
Transmission Electron Microscopy Analysis ◽  
Scanning Transmission ◽  
Electron Microscopy Analysis ◽  
Beam Currents

Abstract We evaluated the beam current dependence of defect formation during Mg ion implantation into GaN at a high temperature of 1100℃ with two beam currents. Photoluminescence spectra suggested that low-beam-current ion implantation reduced the vacancy concentration and activated Mg to a greater extent. Moreover, scanning transmission electron microscopy analysis showed that low-beam-current implantation reduced the density of Mg segregation defects with inactive Mg and increased the number of intrinsic dislocation loops, suggesting a decrease in the density of Ga and N vacancies. The formation of these defects depended on beam current, which is an important parameter for defect suppression.

scholarly journals Certified ion implantation fluence by high accuracy RBS

The Analyst ◽  
2015 ◽  
Vol 140 (9) ◽  
pp. 3251-3261 ◽  
Author(s):  
Julien L. Colaux ◽  
Chris Jeynes ◽  
Keith C. Heasman ◽  
Russell M. Gwilliam
Keyword(s):  
Ion Implantation ◽  
High Accuracy ◽  
Implantation Fluence

1% Implanter Performance: RBS/measured fluence ratio for 16 implants (1015 As cm−2) over 2 years.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Sign in / Sign up

Export Citation Format

Share Document