The influence of non-parallelism of electron and positron velocities upon high-energy e+e− pair ionization loss in thin plate

2015 ◽  
Vol 355 ◽  
pp. 140-143 ◽  
Author(s):  
S.V. Trofymenko ◽  
N.F. Shul’ga
Keyword(s):  
Thin Plate ◽  
High Energy ◽  
Ionization Loss ◽  
Pair Ionization

Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector

2022 ◽  
Vol 17 (01) ◽  
pp. P01015
Author(s):  
R.M. Nazhmudinov ◽  
A.V. Shchagin ◽  
A.S. Kubankin ◽  
A.G. Afonin ◽  
G.I. Britvich ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Silicon Detector ◽  
Incident Beam ◽  
High Energy ◽  
Silicon Detectors ◽  
Arbitrary Angle ◽  
Ionization Loss ◽  
Flat Detector ◽  
High Energy Particles ◽  
Relativistic Particles

Abstract Research of the ionization loss of 50 GeV protons, the path of which in the depleted layer of the silicon detector was smoothly regulated in the range from 0.3 to 10 mm, is presented. In the experiment, we used a flat silicon detector with a fixed thickness of the depleted layer of 300 μm. The smooth regulation of the path was realized due to the variation of the angle between the surface of the detector and the incident proton beam. The comparison of experimental data and theoretical calculations of the ionization loss demonstrates agreement in all range of thicknesses. Results of the research can be used in order to control the angle between the surface of the detector and the incident beam of relativistic particles. Besides, the results can be used in the analysis of data from astrophysical silicon detectors of charged particles if high-energy particles crossed flat detectors at arbitrary angle.

scholarly journals Simulating an ultra-broadband concept for Exawatt-class lasers

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Zhaoyang Li ◽  
Yoshiaki Kato ◽  
Junji Kawanaka
Keyword(s):  
Thin Plate ◽  
Peak Power ◽  
Rapid Development ◽  
High Energy ◽  
Intense Laser ◽  
High Peak Power ◽  
Power Intensity ◽  
Hybrid Concept ◽  
Chirped Pulse Amplification ◽  
Optical Cycle

AbstractThe rapid development of the optical-cycle-level ultra-fast laser technologies may break through the bottleneck of the traditional ultra-intense laser [i.e., Petawatt (PW, 1015 W) laser currently] and enable the generation of even higher peak-power/intensity lasers. Herein, we simulate an ultra-broadband concept for the realization of an Exawatt-class (EW, 1018 W) high peak-power laser, where the wide-angle non-collinear optical parametric chirped-pulse amplification (WNOPCPA) is combined with the thin-plate post-compression. A frequency-chirped carrier-envelope-phase stable super-continuum laser is amplified to high-energy in WNOPCPA by pumping with two pump-beamlets and injected into the thin-plate post-compression to generate a sub-optical-cycle high-energy laser pulse. The numerical simulation shows this hybrid concept significantly enhances the gain bandwidth in the high-energy amplifier and the spectral broadening in the post-compression. By using this concept, a study of a prototype design of a 0.5 EW system is presented, and several key challenges are also examined.

scholarly journals The application of thin-plate spark chambers to high-energy π-p experiments

1963 ◽  
Vol 20 ◽  
pp. 208-212 ◽  
Author(s):  
E. Bleuler ◽  
D.O. Caldwell ◽  
B. Elsner ◽  
D. Harting ◽  
L.W. Jones ◽  
...  
Keyword(s):  
Thin Plate ◽  
High Energy

Ionization loss for high-energy electrons in thin targets

1974 ◽  
Vol 9 (4) ◽  
pp. 1418-1429 ◽  
Author(s):  
James T. O'Brien ◽  
Hall Crannell ◽  
F. J. Kline ◽  
S. Penner
Keyword(s):  
High Energy ◽  
Ionization Loss ◽  
High Energy Electrons

scholarly journals On the ionization loss spectra of high-energy channeled negatively charged particles

2020 ◽  
Vol 80 (7) ◽  
Author(s):  
S. V. Trofymenko ◽  
I. V. Kyryllin
Keyword(s):  
Numerical Simulation ◽  
Experimental Determination ◽  
Silicon Crystal ◽  
Charged Particles ◽  
High Energy ◽  
Crystal Thickness ◽  
Planar Channeling ◽  
Characteristic Parameters ◽  
Ionization Loss

Abstract The ionization loss spectra of high-energy negatively charged particles which move in the planar channeling mode in a silicon crystal are studied with the use of numerical simulation. The case when the crystal thickness is on the order of the dechanneling length $$l_d$$ld is considered. It is shown that in this case the shape of the spectrum noticeably depends on $$l_d$$ld. The evolution of various characteristic parameters of the spectrum with the change of $$l_d$$ld is investigated. A method of the experimental determination of $$l_d$$ld on the basis of the measurement of the ionization loss spectrum is proposed.

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