scholarly journals Surface morphology changes of silicon carbide by helium plasma irradiation

2018 ◽  
Vol 16 ◽  
pp. 145-148
Author(s):  
N. Yamashita ◽  
K. Omori ◽  
Y. Kimura ◽  
T. Hinoki ◽  
K. Ibano ◽  
...  
2021 ◽  
Vol 26 ◽  
pp. 100939
Author(s):  
G. Sinclair ◽  
T. Abrams ◽  
S. Bringuier ◽  
D.M. Thomas ◽  
L. Holland ◽  
...  

2021 ◽  
Vol 11 (4) ◽  
pp. 1619
Author(s):  
Jing Yan ◽  
Xia Li ◽  
Kaigui Zhu

The surface morphology of pure W bulks and nanocrystalline tungsten films was investigated after exposure to a low-energy (100 eV/D), high-flux (1.8 × 1021 D·m−2s−1) deuterium plasma. Nanocrystalline tungsten films of 6 μm thickness were deposited on tungsten bulks and exposed to deuterium plasma at various fluences ranging from 1.30 × 1025 to 5.18 × 1025 D·m−2. Changes in surface morphology from before to after irradiation were studied with scanning electron microscopy (SEM). The W bulk exposed to low-fluence plasma (1.30 × 1025 D·m−2) shows blisters. The blisters on the W bulk irradiated to higher-fluence plasma are much larger (~2 µm). The blisters on the surface of W films are smaller in size and lower in density than those of the W bulks. In addition, the modifications exhibit the appearance of cracks below the surface after deuterium plasma irradiation. It is suggested that the blisters are caused by the diffusion and aggregation of the deuterium-vacancy clusters. The deuterium retention of the W bulks and nanocrystalline tungsten films was studied using thermal desorption spectroscopy (TDS). The retention of deuterium in W bulks and W films increases with increasing deuterium plasma fluence when irradiated at 500 K.


2015 ◽  
Vol 159 ◽  
pp. 118-121 ◽  
Author(s):  
Ernandes T. Tenório-Neto ◽  
Marcos R. Guilherme ◽  
Manuel E.G. Winkler ◽  
Lucio Cardozo-Filho ◽  
Stéphani C. Beneti ◽  
...  

Author(s):  
Quan Shi ◽  
Shin Kajita ◽  
Shuyu Dai ◽  
Shuangyuan Feng ◽  
Noriyasu Ohno

2003 ◽  
Vol 313-316 ◽  
pp. 92-96 ◽  
Author(s):  
K. Tokunaga ◽  
R.P. Doerner ◽  
R. Seraydarian ◽  
N. Noda ◽  
Y. Kubota ◽  
...  

2015 ◽  
Vol 821-823 ◽  
pp. 468-471 ◽  
Author(s):  
Yuki Mori ◽  
Mieko Matsumura ◽  
Hirotaka Hamamura ◽  
Toshiyuki Mine ◽  
Akio Shima ◽  
...  

The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.


2015 ◽  
Vol 463 ◽  
pp. 109-115 ◽  
Author(s):  
Atsushi M. Ito ◽  
Arimichi Takayama ◽  
Yasuhiro Oda ◽  
Tomoyuki Tamura ◽  
Ryo Kobayashi ◽  
...  

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