Direct Observation of Dielectric Breakdown at Step-Bunching on 4H-SiC
2015 ◽
Vol 821-823
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pp. 468-471
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Keyword(s):
The mechanism of dielectric breakdown of oxide on step-bunching of 4H-silicon carbide (SiC) was investigated. Comparing the surface morphology obtained before forming metal-oxide-semiconductor (MOS) capacitor and optical emission on the capacitor under electrical stress, it was cleared that current concentrates on step-bunching and it often caused preferential dielectric breakdown. Based on TEM analysis and the observation of time dependence of emission under the stress, a new model was proposed to explain the dielectric breakdown on step-bunching.
2014 ◽
Vol 778-780
◽
pp. 611-614
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2014 ◽
Vol 53
(8S1)
◽
pp. 08LA01
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2016 ◽
Vol 58
◽
pp. 185-191
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2002 ◽
Vol 389-393
◽
pp. 1009-1012
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2015 ◽
Vol 821-823
◽
pp. 177-180
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2019 ◽
Vol 467-468
◽
pp. 1161-1169
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2009 ◽
Vol 48
(2)
◽
pp. 021206
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