Electron beam lithography inscribed varied-line-spacing and uniform integrated reflective plane grating fabricated through line-by-line method

An equal-period plane diffraction grating fabricated through electron beam lithography line-by-line method was designed and applied to the experiment of angle sensitivity testing. The size of the fabricated grating region was [Formula: see text] mm and the period was 1526 nm. The incident light was transmitted via the Y-type fiber to collimator lens fixed on the angle disc, which can be adjusted to change the incident light angle. The diffraction spectra generated by the incident light irradiating the grating surface were collected by the optical spectrum analyzer. In this experiment, the incident light angle was fixed at 25[Formula: see text]. When the spot moved horizontally by 50 mm, the diffraction wavelength was basically unchanged. When the incident light angle was adjusted from 15[Formula: see text] to 31[Formula: see text], the diffraction wavelength was changed from 834.03 nm to 1589.80 nm, the angular sensitivity was 47.508 nm/[Formula: see text], and the linearity was 0.9998.

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Soft X-ray varied-line-spacing gratings fabricated by near-field holography using an electron beam lithography-written phase mask

Journal of Synchrotron Radiation ◽

10.1107/s1600577519008245 ◽

2019 ◽

Vol 26 (5) ◽

pp. 1782-1789 ◽

Cited By ~ 2

Author(s):

Dakui Lin ◽

Zhengkun Liu ◽

Kay Dietrich ◽

Andréy Sokolov ◽

Mewael Giday Sertsu ◽

...

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Near Field ◽

Central Line ◽

Stray Light ◽

Phase Mask ◽

X Ray ◽

Density Distributions ◽

Line Spacing

A fabrication method comprising near-field holography (NFH) with an electron beam lithography (EBL)-written phase mask was developed to fabricate soft X-ray varied-line-spacing gratings (VLSGs). An EBL-written phase mask with an area of 52 mm × 30 mm and a central line density greater than 3000 lines mm−1 was used. The introduction of the EBL-written phase mask substantially simplified the NFH optics for pattern transfer. The characterization of the groove density distribution and diffraction efficiency of the fabricated VLSGs indicates that the EBL–NFH method is feasible and promising for achieving high-accuracy groove density distributions with corresponding image properties. Vertical stray light is suppressed in the soft X-ray spectral range.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abc78d ◽

2020 ◽

Vol 59 (12) ◽

pp. 126502

Author(s):

Moataz Eissa ◽

Takuya Mitarai ◽

Tomohiro Amemiya ◽

Yasuyuki Miyamoto ◽

Nobuhiko Nishiyama

Keyword(s):

Electron Beam ◽

Proximity Effect ◽

Electron Beam Lithography ◽

Photonic Waveguides ◽

Proximity Effect Correction

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Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

Electronics Letters ◽

10.1049/el:19990817 ◽

1999 ◽

Vol 35 (15) ◽

pp. 1283 ◽

Cited By ~ 2

Author(s):

S. Michel ◽

E. Lavallée ◽

J. Beauvais ◽

J. Mouine

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Lithography Process

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Nanooptical elements for visual verification

Scientific Reports ◽

10.1038/s41598-021-81950-w ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Alexander Goncharsky ◽

Anton Goncharsky ◽

Dmitry Melnik ◽

Svyatoslav Durlevich

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Mass Production ◽

Optical Element ◽

Visual Image ◽

Zero Order ◽

Diffractive Optical Elements ◽

Optical Elements ◽

Standard Equipment ◽

Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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