Magneto-tunability of photocurrent in Zn0.3Ni0.7Fe2O4/ZnO-rGO composite heterojunction device

2022 ◽  
Vol 149 ◽  
pp. 107801
Author(s):  
Apurba Pal ◽  
Debajit Deb ◽  
J.N. Roy ◽  
P. Dey
Keyword(s):  
Heterojunction Device

Synthesis of MoS 2 Layers on GaN Using Ammonium Tetrathiomolybdate for Heterojunction Device Applications

2021 ◽  
pp. 2000198
Author(s):  
Pradeep Desai ◽  
Bhagyashri Todankar ◽  
Ajinkya K. Ranade ◽  
Masaharu Kondo ◽  
Takehisa Dewa ◽  
...  
Keyword(s):  
Ammonium Tetrathiomolybdate ◽  
Device Applications ◽  
Heterojunction Device

Seebeck coefficient controlled by magnetic field based on the P3HT/PCBM heterojunction device

2021 ◽  
Vol 90 ◽  
pp. 106068
Author(s):  
Mengying Wu ◽  
Jiashun Duan ◽  
Kai Feng ◽  
Huayang Yu ◽  
Ling Xu
Keyword(s):  
Magnetic Field ◽  
Seebeck Coefficient ◽  
Heterojunction Device

Electrochemical C-V profiling of heterojunction device structures

1989 ◽  
Vol 36 (2) ◽  
pp. 309-313 ◽  
Author(s):  
A.C. Seabaugh ◽  
W.R. Frensley ◽  
R.J. Matyi ◽  
G.E. Cabaniss
Keyword(s):  
Device Structures ◽  
Heterojunction Device

Room temperature electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction device grown by PLD

2014 ◽  
Vol 10 (3) ◽  
pp. 661-664 ◽  
Author(s):  
Lichun Zhang ◽  
Qingshan Li ◽  
Feifei Wang ◽  
Chong Qu ◽  
Fengzhou Zhao
Keyword(s):  
Room Temperature ◽  
Heterojunction Device

SEMICONDUCTING CARBON NANOTUBE PHOTOVOLTAIC PHOTODETECTORS

2011 ◽  
Vol 20 (03) ◽  
pp. 687-695 ◽  
Author(s):  
DOMINICK J. BINDL ◽  
MICHAEL S. ARNOLD
Keyword(s):  
Carbon Nanotubes ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Near Infrared ◽  
Series Resistance ◽  
Single Walled Carbon Nanotubes ◽  
Infrared Band ◽  
Device Architecture ◽  
Heterojunction Device ◽  
Walled Carbon Nanotubes

A photovoltaic photodetector harnessing near infrared band gap absorption by thin films of post-synthetically sorted semiconducting single walled carbon nanotubes ( s -SWCNTs) is described. Peak specific detectivity of 6×1011 Jones at -0.1 V bias at 1210 nm is achieved using a heterojunction device architecture: indium tin oxide/ ca. 5 nm s -SWCNT / 120 nm C60 / 10 nm 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / Ag. The photodiodes are characterized by a series resistance of 2.9 Ω cm2 and a rectification ratio of 104 at ±1V. These results are expected to guide the exploration of new classes of solution-processable, mechanically flexible, integrable, thin film photovoltaic photodetectors with tunable sensitivity in the visible and infrared spectra based on semiconducting carbon nanotubes.

Electrical characteristics of lateral organic bulk heterojunction device structures

2012 ◽  
Vol 13 (7) ◽  
pp. 1185-1191 ◽  
Author(s):  
Christopher Lombardo ◽  
Zi-En Ooi ◽  
Eric Danielson ◽  
Ananth Dodabalapur
Keyword(s):  
Bulk Heterojunction ◽  
Electrical Characteristics ◽  
Device Structures ◽  
Heterojunction Device

Thermal spin filtering, thermal spin switching and negative-differential-resistance in thermal spin currents in zigzag SiC nanoribbons

2014 ◽  
Vol 16 (33) ◽  
pp. 17493-17498 ◽  
Author(s):  
Dan-Dan Wu ◽  
Hua-Hua Fu ◽  
Lei Gu ◽  
Yun Ni ◽  
Feng-Xia Zu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Spin Filter ◽  
Spin Currents ◽  
Heterojunction Device ◽  
Spin Switching ◽  
Spin Filtering

A thermoelectric heterojunction device based on zigzag silicon carbide nanoribbons can serve as a perfect thermal spin filter and switcher.

Electrical properties of an a-Si/Si(p)/Si(n) heterojunction device

2000 ◽  
Vol 15 (10) ◽  
pp. 980-984 ◽  
Author(s):  
V A Dorosinets ◽  
V A Samuilov ◽  
N A Poklonski ◽  
A Belous ◽  
K G Kyritsi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Heterojunction Device
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