Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages

2017 ◽  
Vol 73 ◽  
pp. 252-259 ◽  
Author(s):  
M. Bouzidi ◽  
S. Soltani ◽  
Z. Chine ◽  
A. Rebey ◽  
M.K. Shakfa
2008 ◽  
Vol 516 (18) ◽  
pp. 6344-6352 ◽  
Author(s):  
Z.L. Fang ◽  
S.P. Li ◽  
J.C. Li ◽  
H.Z. Sun ◽  
S.J. Wang ◽  
...  

2000 ◽  
Vol 5 (S1) ◽  
pp. 689-695 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm−1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.


2006 ◽  
Vol 963 ◽  
Author(s):  
Vitaliy Avrutin ◽  
Umit Ozgur ◽  
Natalia Izyumskaya ◽  
Serguei Chevtchenko ◽  
Jacob Leach ◽  
...  

ABSTRACTZnO nanorods were grown by catalyst-assisted vapor phase transport on Si(001), GaN(0001)/c-Al2O3, and bulk ZnO(0001) substrates. Morphology studies showed that ZnO nanorods grew mostly perpendicularly to the GaN substrate surface, whereas a more random directional distribution was found for nanorods on Si. Optical properties of fabricated nanorods were studied by steady-state photoluminescence and time-resolved photoluminescence. Stimulated emission was observed from ZnO nanorods on GaN substrates. Raman spectroscopy revealed biaxial strain in the nanorod samples grown on Si. Conductive atomic force microscopy was applied to study I-V spectra of individual nanorods.


2019 ◽  
Vol 52 (1) ◽  
Author(s):  
A. Aamoum ◽  
K. Waszkowska ◽  
S. Taboukhat ◽  
P. Płóciennik ◽  
M. Bakasse ◽  
...  

1989 ◽  
Vol 148 ◽  
Author(s):  
H. X. Jiang ◽  
P. Zhou ◽  
S. A. Solin ◽  
G. Bai

ABSTRACTOptical properties of GaAs-Al0 5Ga0 5As multiple quantum wells affected by interface roughness have been investigated by timeresolved photoluminescence. The interface roughness affects on exciton dynamics is shown to be more complicated than those previously well studied line-width broadening of exciton transitions. A two-exponential decay of exciton luminescence and exciton peak shifting with increasing delay time have been observed. These observations have been successfully interpreted in terms of the interface roughness effects.


2020 ◽  
Author(s):  
Shao-Yu Chen ◽  
Maciej Pieczarka ◽  
Matthias Wurdack ◽  
Eliezer Estrecho ◽  
Takashi Taniguchi ◽  
...  

Abstract In monolayer WSe2, interactions between the lower-energy momentum- and spin-indirect “dark” excitons and the bright exciton (X) are likely to be significant in determining the optical properties of X at high power, and limit the ultimate exciton densities that can be achieved, yet little is known about them. Here, by employing time-resolved photoluminescence measurements, we demonstrate an efficient population of dark excitons via inter-state conversion between X and the spin-indirect intravalley excitons (D) through spin-flip, and between D and the momentum-indirect intervalley excitons (XK) mediated by the exchange interaction (D+D ←→ XK +XK). Moreover, we observe a persistent redshift of the X exciton on sub-ns timescales due to strong excitonic screening by the long-lived dense XK exciton. Our results provide a new insight into the many-body interactions between bright and dark excitons, and point to a possibility to employ dark excitons for investigating exciton condensation and valleytronics.


1999 ◽  
Vol 595 ◽  
Author(s):  
A. Kaschner ◽  
J. Holst ◽  
U. von Gfug ◽  
A. Hoffmann ◽  
F. Bertram ◽  
...  

AbstractWe comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.


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