Morphology and Optical Properties of ZnO Nanorods Grown by Catalyst-assisted Vapor Transport on Various Substrates

2006 ◽  
Vol 963 ◽  
Author(s):  
Vitaliy Avrutin ◽  
Umit Ozgur ◽  
Natalia Izyumskaya ◽  
Serguei Chevtchenko ◽  
Jacob Leach ◽  
...  
Keyword(s):  
Optical Properties ◽  
Substrate Surface ◽  
Zno Nanorods ◽  
Stimulated Emission ◽  
Conductive Atomic Force Microscopy ◽  
Vapor Phase Transport ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Time Resolved Photoluminescence

ABSTRACTZnO nanorods were grown by catalyst-assisted vapor phase transport on Si(001), GaN(0001)/c-Al2O3, and bulk ZnO(0001) substrates. Morphology studies showed that ZnO nanorods grew mostly perpendicularly to the GaN substrate surface, whereas a more random directional distribution was found for nanorods on Si. Optical properties of fabricated nanorods were studied by steady-state photoluminescence and time-resolved photoluminescence. Stimulated emission was observed from ZnO nanorods on GaN substrates. Raman spectroscopy revealed biaxial strain in the nanorod samples grown on Si. Conductive atomic force microscopy was applied to study I-V spectra of individual nanorods.

Preparation and Time Resolved Photoluminescence of Nanoscale InP Islands in In0.48Ga0.52P

1995 ◽  
Vol 379 ◽  
Author(s):  
K. Eberl ◽  
A. Kurtenbach ◽  
K. HÄusler ◽  
F. Noll ◽  
W.W. RÜhle
Keyword(s):  
Lattice Mismatch ◽  
Excitation Power ◽  
Buffer Layers ◽  
Time Resolved ◽  
Force Microscopy ◽  
Self Assembling ◽  
Atomic Force ◽  
Transmission Electron ◽  
Decay Times ◽  
Time Resolved Photoluminescence

ABSTRACTNanoscale InP islands are formed during InP/In0 48Ga0.52P heteroepitaxy due to the lattice mismatch of about 3.7%. The samples are prepared by solid source molecular beam epitaxy on (001) GaAs substrate. Atomic force microscopy measurements show that the size of the islands is typically 15 to 50 nm in diameter and about 5 to 10 nm high depending on the nominally deposited InP layer thickness, which is between 1 and 7.5 monolayers. Transmission electron micrographs show the coherent incorporation into the In0.48Ga0.52P matrix for InP islands with 2.5 monolayers. Resonantly excited time-resolved photoluminescence (PL) measurements of the self assembling InP dots are performed for optical characterisation. The decay times are typically 400 ps. The dependence on excitation power and temperature indicates the quantum dot nature of the InP islands. Finally a pronounced alignment of the InP islands is obtained on strained In0.61Ga0.39P buffer layers.

scholarly journals Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

2020 ◽  
Vol 31 (40) ◽  
pp. 404003 ◽  
Author(s):  
Yonatan Calahorra ◽  
Wonjong Kim ◽  
Jelena Vukajlovic-Plestina ◽  
Anna Fontcuberta i Morral ◽  
Sohini Kar-Narayan
Keyword(s):  
Atomic Force Microscopy ◽  
Open Circuit ◽  
Conductive Atomic Force Microscopy ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force

Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

2013 ◽  
Vol 265 ◽  
pp. 176-179 ◽  
Author(s):  
Yunfeng Wu ◽  
Naisen Yu ◽  
Dongping Liu ◽  
Yangyang He ◽  
Yuanda Liu ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Zno Nanorods ◽  
Electrical Anisotropy ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Tailoring Optical Properties of Blue-Gap Poly(p-phenylene Vinylene)s for LEDs Applications

2010 ◽  
Vol 75 ◽  
pp. 118-123
Author(s):  
Elena Dilonardo ◽  
Maria M. Giangregorio ◽  
Maria Losurdo ◽  
Pio Capezzuto ◽  
Giovanni Bruno ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Tin Oxide ◽  
Substrate Surface ◽  
Polymer Chains ◽  
Semiconducting Polymers ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Self Assembling ◽  
Atomic Force

There has been growing interest in developing new semiconducting polymers for applications in optoelectronics (OLEDs) due to their exceptional processability and appealing characteristic of manipulating electronic and optical properties by tuning of molecular structure and self-assembling. This study is an investigation on the interplay among supermolecular organization and optical properties of thin films of the poly[2-(2-ethylhexyloxy)-5-methoxy]-1, 4-phenylenedifluorovinylene (MEH-PPDFV) conjugated polymer, which has fluorinated vinylene units. This interplay is elucidated exploiting atomic force microscopy, spectroscopy ellipsometry, photoluminescence and electroluminescence. Thin films of MEH-PPDFV have been deposited by drop casting on indium-tin-oxide (ITO), quartz and glass substrates. The dependence of polymer chains self-organization and morphology on substrate surface is presented. Furthermore, it is demonstrated that the presence of F-atoms in the vinylene units of the MEH-PPDFV yields a blue optical band gap with the maximum of the fundamental HOMO-LUMO transition at 331 nm and photoluminescence at 458 nm. The OLED built with the above polymer shows a very stable blue-greenish electroluminescence that is also achieved at 504 nm.

scholarly journals Electrical properties of ZnO nanorods studied by conductive atomic force microscopy

2011 ◽  
Vol 110 (5) ◽  
pp. 052005 ◽  
Author(s):  
I. Beinik ◽  
M. Kratzer ◽  
A. Wachauer ◽  
L. Wang ◽  
R. T. Lechner ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Zno Nanorods ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing

2015 ◽  
Vol 821-823 ◽  
pp. 297-302 ◽  
Author(s):  
Marko J. Tadjer ◽  
Nadeemullah A. Mahadik ◽  
Boris N. Feigelson ◽  
Robert E. Stahlbush ◽  
Eugene A. Imhoff ◽  
...  
Keyword(s):  
Basal Plane ◽  
Carrier Lifetime ◽  
Base Temperature ◽  
Rapid Thermal Anneal ◽  
Time Resolved ◽  
Force Microscopy ◽  
Atomic Force ◽  
Photoluminescence Decay ◽  
Before And After ◽  
Time Resolved Photoluminescence

Elimination of basal plane dislocations (BPDs) in epitaxial 4H-SiC is demonstrated via a novel pulsed annealing technique in a moderate N2overpressure of 0.55 MPa. BPD removal in 15 µm thick epitaxial 4H-SiC was confirmed using ultraviolet photoluminescence (UVPL) imaging before and after the annealing process. The samples were capped with a carbon cap, introduced into the annealing chamber, and brought up to a base temperature (TBASE) of around 1550 °C for the pulsed anneal. The multicycle rapid thermal anneal (MRTA) was then performed in the TBASE:TMAXrange, where TMAX= 1875 °C was the peak temperature reached by the annealing cycles. Post-anneal surface quality and carrier lifetime were characterized by atomic force microscopy and time-resolved photoluminescence decay.

Fault Isolation of MOL and FEOL Buried Defects Using Conductive Atomic Force Microscopy as a Complement to Passive Voltage Contrast Imaging

2017 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Linda Conohan ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Cmos Technology ◽  
Fault Isolation ◽  
Contrast Imaging ◽  
Conductive Atomic Force Microscopy ◽  
Isolation Technique ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Voltage Contrast

Abstract Atomic force microscopy (AFM) methods have provided a wealth of knowledge into the topographic, electrical, mechanical, magnetic, and electrochemical properties of surfaces and materials at the micro- and nanoscale over the last several decades. More specifically, the application of conductive AFM (CAFM) techniques for failure analysis can provide a simultaneous view of the conductivity and topographic properties of the patterned features. As CMOS technology progresses to smaller and smaller devices, the benefits of CAFM techniques have become apparent [1-3]. Herein, we review several cases in which CAFM has been utilized as a fault-isolation technique to detect middle of line (MOL) and front end of line (FEOL) buried defects in 20nm technologies and beyond.

Fault Localization in Contact Level by Using Conductive Atomic Force Microscopy

2003 ◽  
Author(s):  
Jon C. Lee ◽  
J. H. Chuang
Keyword(s):  
Atomic Force Microscopy ◽  
Integrated Circuits ◽  
Fault Localization ◽  
Electrical Characterization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Optical Electron ◽  
Defect Isolation ◽  
Voltage Contrast

Abstract As integrated circuits (IC) have become more complicated with device features shrinking into the deep sub-micron range, so the challenge of defect isolation has become more difficult. Many failure analysis (FA) techniques using optical/electron beam and scanning probe microscopy (SPM) have been developed to improve the capability of defect isolation. SPM provides topographic imaging coupled with a variety of material characterization information such as thermal, magnetic, electric, capacitance, resistance and current with nano-meter scale resolution. Conductive atomic force microscopy (C-AFM) has been widely used for electrical characterization of dielectric film and gate oxide integrity (GOI). In this work, C-AFM has been successfully employed to isolate defects in the contact level and to discriminate various contact types. The current mapping of C-AFM has the potential to identify micro-leaky contacts better than voltage contrast (VC) imaging in SEM. It also provides I/V information that is helpful to diagnose the failure mechanism by comparing I/V curves of different contact types. C-AFM is able to localize faulty contacts with pico-amp current range and to characterize failure with nano-meter scale lateral resolution. C-AFM should become an important technique for IC fault localization. FA examples of this technique will be discussed in the article.

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