Morphological modification and UV sensitivity enhancement in ZnO:Fe films with a seed layer

2021 ◽  
Vol 122 ◽  
pp. 111658
Author(s):  
Eka Nurfani ◽  
Yeli Krisdayanti Lature ◽  
Mohamad Samsul Anrokhi
2021 ◽  
Vol 112 ◽  
pp. 110768
Author(s):  
E. Nurfani ◽  
A. Lailani ◽  
W.A.P. Kesuma ◽  
M.S. Anrokhi ◽  
G.T.M. Kadja ◽  
...  

2021 ◽  
pp. 413603
Author(s):  
Eka Nurfani ◽  
Lutfi Antika ◽  
M. Samsul Anrokhi ◽  
Wahyu S. Sipahutar ◽  
Aditya Rianjanu ◽  
...  

2011 ◽  
Vol 131 (7) ◽  
pp. 235-239 ◽  
Author(s):  
Kaoru Yamashita ◽  
Tomoya Yoshizaki ◽  
Minoru Noda ◽  
Masanori Okuyama

1996 ◽  
Vol 451 ◽  
Author(s):  
R. Amster ◽  
B. Johnson ◽  
L. S. Vanasupa
Keyword(s):  

ABSTRACTWe studied the nucleation of Cu deposited by an electroless bath. A Pd seed layer was sputtered onto a (100) Si substrate and analyzed with GIX, STM, and AFM. The seed layer was then placed in varying ED-Cu bath conditions and also analyzed using GIX, STM, and AFM. GIX analysis results show a (111) texture for the Pd seed layer as well as the ED-Cu layer. The seed layer's influence on the deposited Cu grain's texture was found to be inconclusive.


Author(s):  
Wen-Fei Hsieh ◽  
Shih-Hsiang Tseng ◽  
Bo Min She

Abstract In this study, an FIB-based cross section TEM sample preparation procedure for targeted via with barrier/Cu seed layer is introduced. The dual beam FIB with electron beam for target location and Ga ion beam for sample milling is the main tool for the targeted via with barrier/Cu seed layer inspection. With the help of the FIB operation and epoxy layer protection, ta cross section TEM sample at a targeted via with barrier/Cu seed layer could be made. Subsequent TEM inspection is used to verify the quality of the structure. This approach was used in the Cu process integration performance monitor. All these TEM results are very helpful in process development and yield improvement.


Genetics ◽  
1990 ◽  
Vol 124 (4) ◽  
pp. 817-831 ◽  
Author(s):  
R H Schiestl ◽  
S Prakash ◽  
L Prakash

Abstract rad6 mutants of Saccharomyces cerevisiae are defective in the repair of damaged DNA, DNA damage induced mutagenesis, and sporulation. In order to identify genes that can substitute for RAD6 function, we have isolated genomic suppressors of the UV sensitivity of rad6 deletion (rad6 delta) mutations and show that they also suppress the gamma-ray sensitivity but not the UV mutagenesis or sporulation defects of rad6. The suppressors show semidominance for suppression of UV sensitivity and dominance for suppression of gamma-ray sensitivity. The six suppressor mutations we isolated are all alleles of the same locus and are also allelic to a previously described suppressor of the rad6-1 nonsense mutation, SRS2. We show that suppression of rad6 delta is dependent on the RAD52 recombinational repair pathway since suppression is not observed in the rad6 delta SRS2 strain containing an additional mutation in either the RAD51, RAD52, RAD54, RAD55 or RAD57 genes. Possible mechanisms by which SRS2 may channel unrepaired DNA lesions into the RAD52 DNA repair pathway are discussed.


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