Study of Nucleation of Electroless Cu Deposition on Pd

1996 ◽  
Vol 451 ◽  
Author(s):  
R. Amster ◽  
B. Johnson ◽  
L. S. Vanasupa
Keyword(s):  
Seed Layer ◽  
Si Substrate

ABSTRACTWe studied the nucleation of Cu deposited by an electroless bath. A Pd seed layer was sputtered onto a (100) Si substrate and analyzed with GIX, STM, and AFM. The seed layer was then placed in varying ED-Cu bath conditions and also analyzed using GIX, STM, and AFM. GIX analysis results show a (111) texture for the Pd seed layer as well as the ED-Cu layer. The seed layer's influence on the deposited Cu grain's texture was found to be inconclusive.

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

2020 ◽  
Vol 117 (2) ◽  
pp. 022103
Author(s):  
Jianfei Shen ◽  
Xuelin Yang ◽  
Danshuo Liu ◽  
Zidong Cai ◽  
Lai Wei ◽  
...  
Keyword(s):  
Seed Layer ◽  
Si Substrate ◽  
High Quality ◽  
Aln Film

Seed layer effect on different properties and UV detection capability of hydrothermally grown ZnO nanorods over SiO2/p-Si substrate

2018 ◽  
Vol 117 ◽  
pp. 503-514 ◽  
Author(s):  
Basavaraj S. Sannakashappanavar ◽  
C.R. Byrareddy ◽  
Pesala Sudheer Kumar ◽  
Aniruddh Bahadur Yadav
Keyword(s):  
Seed Layer ◽  
Zno Nanorods ◽  
Uv Detection ◽  
Detection Capability ◽  
Si Substrate ◽  
Layer Effect

(111)-Oriented Pb(Zr0.52Ti0.48)O3 thin film on Pt(111)/Si substrate using CoFe2O4 nano-seed layer by pulsed laser deposition

2013 ◽  
Vol 24 (10) ◽  
pp. 3736-3743 ◽  
Author(s):  
M. Khodaei ◽  
S. A. Seyyed Ebrahimi ◽  
Yong Jun Park ◽  
Seungwoo Song ◽  
Hyun Myung Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Seed Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Si Substrate

Room temperature synthesis of ZnO nanoflowers on Si substrate via seed-layer assisted solution route

2010 ◽  
Vol 503 (2) ◽  
pp. 514-518 ◽  
Author(s):  
Qian Li ◽  
Haikuo Sun ◽  
Ming Luo ◽  
Wenjian Weng ◽  
Kui Cheng ◽  
...  
Keyword(s):  
Seed Layer ◽  
Room Temperature ◽  
Si Substrate ◽  
Temperature Synthesis ◽  
Room Temperature Synthesis ◽  
Solution Route

High-quality Ge-rich SiGe thin films epitaxially grown on Si at low temperature by a two-step approach

CrystEngComm ◽  
2019 ◽  
Vol 21 (43) ◽  
pp. 6623-6629
Author(s):  
Ke Tao ◽  
Jin Wang ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Zhi Jin ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Seed Layer ◽  
Si Substrate ◽  
High Quality ◽  
Bulk Layer ◽  
Thermal Cvd ◽  
Post Annealing ◽  
Step Growth ◽  
Growth Approach

A two-step growth approach including seed layer epitaxy, post-annealing, and bulk layer epitaxy was proposed to deposit high quality Ge-rich Si1−xGex epilayer directly on Si substrate by reactive thermal CVD (RTCVD) at low temperature (350 °C).

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

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