Temperature dependent transition of conduction mechanism from carrier injection to multistep tunneling in Fe3O4 (111)/Alq3/Co organic spin valve

2021 ◽  
Vol 99 ◽  
pp. 106324
Author(s):  
Debajit Deb ◽  
P. Dey ◽  
R.J. Choudhary ◽  
R. Rawat ◽  
A. Banerjee
Keyword(s):  
Conduction Mechanism ◽  
Spin Valve ◽  
Carrier Injection ◽  
Temperature Dependent

scholarly journals Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 024505 ◽  
Author(s):  
Mitsuru Sometani ◽  
Dai Okamoto ◽  
Shinsuke Harada ◽  
Hitoshi Ishimori ◽  
Shinji Takasu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Conduction Mechanism ◽  
Thermally Grown Oxide ◽  
Temperature Dependent ◽  
Thermally Grown

An efficient temperature dependent hot carrier injection reliability simulation flow

2016 ◽  
Vol 57 ◽  
pp. 10-19
Author(s):  
Mehdi Kamal ◽  
Qing Xie ◽  
Massoud Pedram ◽  
Ali Afzali-Kusha ◽  
Saeed Safari
Keyword(s):  
Carrier Injection ◽  
Temperature Dependent ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals Temperature dependent nucleation, propagation, and annihilation of domain walls in all-perpendicular spin-valve nanopillars

2014 ◽  
Vol 115 (11) ◽  
pp. 113910 ◽  
Author(s):  
D. B. Gopman ◽  
D. Bedau ◽  
S. Mangin ◽  
E. E. Fullerton ◽  
J. A. Katine ◽  
...  
Keyword(s):  
Domain Walls ◽  
Spin Valve ◽  
Temperature Dependent

Investigation of Structural, Morphological and Electro-Optical Behavior of GO/rGO

2018 ◽  
Vol 6 (1) ◽  
pp. 32-43
Author(s):  
Rashmi Chawla ◽  
Poonam Singhal ◽  
Amit Kumar Garg
Keyword(s):  
Graphene Oxide ◽  
Conduction Mechanism ◽  
Structural Changes ◽  
Electronic Devices ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Temperature Range ◽  
Reduced Graphene ◽  
Transport Behaviour ◽  
Optical Behavior

This article examines the temperature-dependent conduction mechanism in graphene oxide (GO) and thick reduced graphene oxide (rGO) film. The mild oxidation method is used for GO synthesis which is then chemically reduced to obtain rGO and characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The different characterization results exhibit substantiate eloquent structural changes while reducing m-rGO to rm-rGO. The charge transport behaviour in GO and rGO film is investigated in the temperature range 16K to 400 K. The result depicts overall increase in conductivity in rGO owing to reduction in functional groups. The electrical conductivity of GO shows crossover from Efros-Shklovskii (ES) variable range hopping (VRH) to Mott VRH in the temperature range 100K-40K to 40K-16K. For rGO ES-VRH conduction is seen in the temperature range of 100K to 40K. The high conductivity of rGO in comparison to GO is todays demand for direct applications in electronic devices.

Trap Assisted Conduction in High K Dielectric Capacitors on 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 679-682 ◽  
Author(s):  
Ming Hung Weng ◽  
Rajat Mahapatra ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Paul G. Coleman ◽  
...  
Keyword(s):  
Barrier Height ◽  
Conduction Mechanism ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Conduction Model ◽  
High K ◽  
Current Conduction ◽  
Capacitor Structure ◽  
High K Dielectric ◽  
A Charge

The characteristic of trap assisted conduction and interface states for a Pd/TiO2/SiO2/SiC structure has been investigated at temperatures up to 500 °C. Thermally oxidized Ti/SiO2 gate capacitors fabricated by dry oxidation in O2 were studied. The electrical measurements show the current conduction through this capacitor structure is controlled by a trap assisted conduction mechanism at low bias and the barrier height (φA) between the metal and the TiO2 was extracted. The current density in the dielectric stacks is also shown to be strongly temperature dependent. The results demonstrate that the formation of a charge dipole under the Pd contact is responsible for barrier height and not any changes in the behaviour of the TiO2 film itself, such as a change in concentration of trapping centres. The reported results indicate electron trapping property across the SiO2 layer is consistent with fitting experimental results to the trap assisted conduction model.

Temperature Dependent Electrical and Dielectrics Properties of Metal-Insulator-Metal Capacitors with Alumina-Silicone Nanolaminate Films

2014 ◽  
Vol 1675 ◽  
pp. 169-176
Author(s):  
Santosh K. Sahoo ◽  
Rakhi P. Patel ◽  
Colin A. Wolden
Keyword(s):  
Conduction Mechanism ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Metal Structures ◽  
Voltage Coefficient ◽  
Metal Insulator Metal ◽  
Potential Applications ◽  
Electrical And Dielectric Properties

ABSTRACTAlumina-silicone hybrid nanolaminate films were synthesized by plasma enhanced chemical vapor deposition (PECVD) process. PECVD allows digital control over nanolaminate construction, and may be performed at low temperature for compatibility with flexible substrates. These materials are being considered as dielectrics for application such as capacitors in thin film transistors and memory devices. Temperature dependent electrical and dielectric properties of the nanolaminate dielectric films in metal-insulator-metal structures are taken in the range of 200- 340 K to better asses their potential applications for different devices. It is observed that the frequency dependent dielectric constant (εr) and ac conductivity (σac) increase with the temperature. Both quadratic (α) and linear (β) voltage coefficient of capacitance (VCC) increases as the temperature increases. The temperature co-efficient of capacitance (TCC) decreases from 894 to 374 ppm/K as the Al2O3 composition increases in the alumina/silicone nanolaminates. Activation energy (Ea) for hopping conduction mechanism varies from 0.011 eV to 0.008 eV as the alumina composition increases from 50 to 83.3%.

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