Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices

Microelectronics Reliability ◽

10.1016/j.microrel.2016.07.147 ◽

2016 ◽

Vol 65 ◽

pp. 60-63 ◽

Cited By ~ 5

Author(s):

Hong-Zhi Lin ◽

Yow-Jon Lin

Keyword(s):

Electrical Conduction ◽

Temperature Dependent ◽

Conduction Mechanisms ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Electrical Conduction Mechanisms

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Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

Physica B Condensed Matter ◽

10.1016/j.physb.2009.01.018 ◽

2009 ◽

Vol 404 (8-11) ◽

pp. 1558-1562 ◽

Cited By ~ 34

Author(s):

F.E. Cimilli ◽

M. Sağlam ◽

H. Efeoğlu ◽

A. Türüt

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Temperature Dependent ◽

Current Voltage ◽

Current Voltage Characteristics

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Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

MRS Proceedings ◽

10.1557/proc-607-321 ◽

1999 ◽

Vol 607 ◽

Author(s):

S. Kato ◽

T. Horikoshi ◽

T. Ohkubo ◽

T. Iida ◽

Y. Takano

Keyword(s):

Silicon Germanium ◽

Bulk Crystals ◽

Temperature Dependent ◽

Alloy Scattering ◽

Self Diffusion ◽

Pn Junction ◽

Current Voltage ◽

Vertical Bridgman ◽

Current Voltage Characteristics ◽

P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

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Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

MRS Proceedings ◽

10.1557/proc-0957-k10-21 ◽

2006 ◽

Vol 957 ◽

Author(s):

Yahya Alivov ◽

Xiao Bo ◽

Fan Qian ◽

Daniel Johnstone ◽

Cole Litton ◽

...

Keyword(s):

Conduction Band ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Band Offset ◽

Measured Temperature ◽

Temperature Dependent ◽

Conduction Band Offset ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Transient Spectroscopy

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

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Electrical Injection and Transport in Films of Semiconductor Nanocrystals

MRS Proceedings ◽

10.1557/proc-571-185 ◽

1999 ◽

Vol 571 ◽

Cited By ~ 1

Author(s):

D.S. Ginger ◽

N.C. Greenham

Keyword(s):

Semiconductor Nanocrystals ◽

Cdse Nanocrystals ◽

Temperature Dependent ◽

Metal Electrodes ◽

Current Voltage ◽

Disordered Films ◽

Effective Mobility ◽

Current Voltage Characteristics ◽

Space Charge Limited Currents ◽

Effective Carrier

ABSTRACTWe study injection and transport in thin disordered films of CdSe nanocrystals between metal electrodes, We investigate the current-voltage characteristics of these devices as a function of electrode material, nanocrystal size, and temperature. We also measure the photocurrent response of these devices, and find that the photocurrent action spectra follow the quantum-confined absorption spectra of the nanocrystals. For dissimilar top and bottom electrodes, we find that the devices are highly rectifying. By studying space charge limited currents in these devices, we are able to place a lower bound on the effective carrier mobility in such films, and we find that the effective mobility is strongly field dependent. We find that the conductivity is strongly temperature dependent, and is qualitatively consistent with an activated hopping process at temperatures above 180 K.

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Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films.

MRS Proceedings ◽

10.1557/proc-378-1025 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 3

Author(s):

Hisayoshi Fujikawa ◽

Yasunori Taga

Keyword(s):

Electrical Properties ◽

Conduction Mechanism ◽

Defect Density ◽

Tantalum Oxide ◽

Composite Films ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Electrical Conduction Mechanisms ◽

Insulating Properties ◽

Nordheim Tunneling

AbstractTa2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective in improving insulating properties without decreasing their dielectric constant. Furthermore, electrical properties of Ta2O5-Y2O3 films were investigated by measuring the current-voltage characteristics in the temperature range from 100 to 330 K. Measurement of temperature dependence of the leakage current revealed that the conduction mechanism at RT changed from the Poole-Frenkel type to the Fowler-Nordheim tunneling type by adding Y2O3 into Ta2O5. Based on the detailed analysis of the results, it is concluded that the addition of Y2O3 into the Ta2O5 film is effective in the reduction of defect density without high-temperature annealing and the alteration of electrical conduction mechanisms of the films.

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