Anomalous electron inelastic scattering rate probed via superconducting fluctuation in epitaxial NbN thin films

2019 ◽  
Vol 567 ◽  
pp. 1353547
Author(s):  
B. Shinozaki ◽  
S. Ezaki ◽  
T. Odou ◽  
T. Asano ◽  
K. Makise
Keyword(s):  
Thin Films ◽  
Inelastic Scattering ◽  
Scattering Rate ◽  
Superconducting Fluctuation

scholarly journals Vibrational density of states of thin films measured by inelastic scattering of synchrotron radiation

1999 ◽  
Vol 263-264 ◽  
pp. 581-583 ◽  
Author(s):  
R Röhlsberger ◽  
W Sturhahn ◽  
T.S Toellner ◽  
K.W Quast ◽  
E.E Alp ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Inelastic Scattering ◽  
Density Of States ◽  
Vibrational Density Of States ◽  
Vibrational Density

scholarly journals Computational Study of In-Plane Phonon Transport in Si Thin Films

2014 ◽  
Vol 4 (1) ◽  
Author(s):  
Xinjiang Wang ◽  
Baoling Huang
Keyword(s):  
Thin Films ◽  
Thermal Transport ◽  
Computational Study ◽  
Isotope Effects ◽  
Phonon Transport ◽  
Phonon Confinement ◽  
Phonon Modes ◽  
Scattering Rate ◽  
Si Films ◽  
Thermal Conductivities

Abstract We have systematically investigated the in-plane thermal transport in Si thin films using an approach based on the first-principles calculations and lattice dynamics. The effects of phonon mode depletion induced by the phonon confinement and the corresponding variation in interphonon scattering, which may be important for the thermal conductivities of ultra-thin films but are often neglected in precedent studies, are considered in this study. The in-plane thermal conductivities of Si thin films with different thicknesses have been predicted over a temperature range from 80 K to 800 K and excellent agreements with experimental results are found. The validities of adopting the bulk phonon properties and gray approximation of surface specularity in thin film studies have been clarified. It is found that in ultra-thin films, while the phonon depletion will reduce the thermal conductivity of Si thin films, its effect is largely offset by the reduction in the interphonon scattering rate. The contributions of different phonon modes to the thermal transport and isotope effects in Si films with different thicknesses under various temperatures are also analyzed.

ANOMALOUS TEMPERATURE EFFECT ON POINT-CONTACT Ag–LaBa2Cu3O7-x CONDUCTANCE SPECTRA

2000 ◽  
Vol 14 (22n23) ◽  
pp. 819-825 ◽  
Author(s):  
E. HATTA ◽  
V. M. SVISTUNOV ◽  
Yu. F. REVENKO ◽  
M. A. BELOGOLOVSKII ◽  
N. A. DOROSHENKO ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Point Contact ◽  
Proximity Effects ◽  
Charge Carriers ◽  
Differential Conductance ◽  
Anomalous Temperature ◽  
Bulk Ceramic ◽  
Scattering Rate ◽  
Wide Range ◽  
Superconducting Parameters

The observation of an anomalous temperature behavior of the differential conductance versus voltage curves in contacts formed by an Ag tip and a bulk ceramic LaBa2Cu3O7-x with Tc around 92 K is reported. For a wide range of temperatures from Tc to helium-liquid ones, we have found a crossover from curves typical for a pure conducting normal metal–superconductor interface up to Giaever tunneling characteristics with gap features shifted to high biases. We take into account the existence of a degraded interlayer with suppressed superconducting parameters between a normal injector and a superconducting bulk and interpret qualitatively the data in terms of mesoscopic proximity effects. We argue that as the temperature is decreased, (i) the electron localization in a disordered region is enhanced, and (ii) in the interlayer, inelastic scattering processes become more effective. The latter was considered as a result of the inelastic scattering rate changes for charge carriers interacting with magnetic excitations in the near-interface region of high-Tc compound junctions.

scholarly journals The scattering of electrons in thin films

1933 ◽  
Vol 140 (840) ◽  
pp. 159-178
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Elastic Scattering ◽  
Inelastic Scattering ◽  
Atomic Number ◽  
General Problem ◽  
Absolute Intensity ◽  
Experimental Investigations ◽  
The Absolute ◽  
Theoretical Side

The laws governing the single elastic scattering of electrons by atoms have been fully investigated from the theoretical side. The more general problem which includes inelastic scattering has also been investigated, but the results are not readily applicable to experimental data. The nature of the results of experimental investigations varies considerably; for the most part electron energies of at least 40 kilovolts and comparatively thick foils have been used. The results of these experiments, which are not wholly in accord for different investigators, indicate that the variation of scattering with voltage and with angle follows the Rutherford law. The absolute intensity is in all cases too large, and it appears to vary with the atomic number of the scattering atom more rapidly than predicted.

scholarly journals INTRINSIC PHASE-DECOHERENCE OF ELECTRONS BY TWO-LEVEL SYSTEMS

2002 ◽  
Vol 16 (14) ◽  
pp. 511-517 ◽  
Author(s):  
VIPIN SRIVASTAVA ◽  
RAISHMA KRISHNAN
Keyword(s):  
Phase Shift ◽  
Inelastic Scattering ◽  
Low Temperatures ◽  
Fundamental Problem ◽  
Scattering Rate ◽  
Phase Saturation ◽  
Long Range Interactions ◽  
Two Level Systems ◽  
Phase Decoherence ◽  
Dynamic Components

The fundamental problem of the phase saturation of electrons in a disordered mesoscopic system at very low temperatures is addressed. The disorder in the medium has both static and dynamic components, the latter being in the form of two-level systems (TLSs) which become just about the only source of inelastic scattering in the limit T → 0. We propose that besides the inelastic nature of scattering from the TLSs, the phase shift of the electrons is also affected by the nature of tunneling in the TLSs. The tunneling becomes incoherent as T decreases due to increasing long-range interactions among the TLSs which affects the phase coherence of electrons scattering from them. The competition between this effect, which increases as ~ T-1, and that of the scattering rate [Formula: see text] behaving as ~ T apparently govern the phase shift of the electrons.

Inelastic-scattering rate on thermal conductivity of adx2−y2superconductor

1998 ◽  
Vol 57 (21) ◽  
pp. 13773-13780 ◽  
Author(s):  
E. Schachinger ◽  
J. P. Carbotte
Keyword(s):  
Thermal Conductivity ◽  
Inelastic Scattering ◽  
Scattering Rate

NONLINEAR TRANSPORT OF 2D ELECTRONS IN MAGNETIC FIELD

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2689-2692
Author(s):  
SERGEY VITKALOV ◽  
JING QIAO ZHANG ◽  
A. A. BYKOV ◽  
A. I. TOROPOV
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Inelastic Scattering ◽  
Strong Magnetic Field ◽  
Landau Levels ◽  
Electron Interaction ◽  
Inelastic Electron ◽  
Strong Nonlinearity ◽  
Scattering Rate ◽  
Electron Relaxation

Electric field induced, spectacular reduction of longitudinal resistivity of two dimensional electrons placed in strong magnetic field is studied in broad range of temperatures. The data are in good agreement with theory, considering the strong nonlinearity of the resistivity as result of non-uniform spectral diffusion of 2D electrons induced by the electric field. Comparison with the theory gives inelastic scattering time τin of the 2D electrons. In temperature range T = 2 - 20 K for overlapping Landau levels, the inelastic scattering rate 1/τin is found to be proportional to T2, indicating dominant contribution of the electron-electron interaction to the inelastic electron relaxation. At strong magnetic field, at which Landau levels are well separated, the inelastic scattering rate is proportional to T3 at high temperatures. We suggest the electron-phonon scattering as the dominant mechanism of the inelastic electron relaxation in this regime. At low temperature and separated Landau levels an additional regime of the inelastic electron relaxation is observed: τin ~ T-1.26.

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