Effect of substrate temperature on conductivity and microstructures of boron-doped silicon nanocrystals in SiCx thin films

2013 ◽  
Vol 53 ◽  
pp. 36-40 ◽  
Author(s):  
Qiang Cheng ◽  
Yuheng Zeng ◽  
Junjun Huang ◽  
Ning Dai ◽  
Ye Yang ◽  
...  
2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  

2013 ◽  
Vol 475-476 ◽  
pp. 1280-1283 ◽  
Author(s):  
Ling Yang ◽  
Yu Pei Zhang ◽  
Ji Wen Xu ◽  
Hua Wang

Boron doped ZnO (BZO) thin films were deposited on glass substrate by ultrasonic spray pyrolysis method using zinc acetylacetonate and boric acid. The structural, morphological, optical and electrical properties of BZO thin films under various doping level of boron and substrate temperature were investigated. The results show that zinc acetylacetonate is helpful to deposit BZO thin films at low temperature. The morphology of grains at low and high substrate temperature is circular and flake-like. The preferred orientation along (101) plane is obvious at 360 °C. The doping level and substrate temperature have remarkable influence on sheet resistance, but little impact on visible transmittance. The optimal sheet resistance of 173 Ω/sq and average visible transmittance of above 80% can be achieved at doping level of 5 at% and growth temperature of 340 °C.


2018 ◽  
Vol 9 ◽  
pp. 1501-1511 ◽  
Author(s):  
Daniel Hiller ◽  
Julian López-Vidrier ◽  
Keita Nomoto ◽  
Michael Wahl ◽  
Wolfgang Bock ◽  
...  

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.


2016 ◽  
Vol 6 (04) ◽  
pp. 469
Author(s):  
Keita Nomoto ◽  
Sebastian Gutsch ◽  
Anna V. Ceguerra ◽  
Andrew Breen ◽  
Hiroshi Sugimoto ◽  
...  

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  

ABSTRACTThis work deals with the role of hydrogen dilution and filament temperature on the morphology, structure and electrical properties of nanocrystalline boron doped silicon carbide thin films produced by hot-wire technique. The structural and morphological data obtained by XRD, SEM and micro-Raman show that for filament temperatures and hydrogen dilutions above 2100°C and 90%, respectively, the surface morphology of the films is granular with a needle shape, while for lower filament temperatures and hydrogen dilutions the surface morphology gets honeycomb like. The SIMS analysis reveals that films produced with filament temperatures of about 2200°C and hydrogen dilution of 99% present a higher hydrogen and carbon incorporation than the films produced at lower temperatures and hydrogen dilutions. These results agree with the electrical and optical characteristics recorded that show that the films produced exhibit optical gaps in the range from 1.8 to 2 eV and transverse conductivities ranging from 10−1S/cm to 10−3 S/cm, consistent with the degree of films crystallinity and carbon incorporation recorded.


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