Combustion synthesis of high-quality diamond film suitable for application in electronic devices

2007 ◽  
Vol 31 (2) ◽  
pp. 1831-1838 ◽  
Author(s):  
Yukihiko Okumura ◽  
Kouichi Kanayama ◽  
Masaya Tabaru ◽  
Satoshi Kawabata
1999 ◽  
Vol 5 (S2) ◽  
pp. 170-171
Author(s):  
Guofu Zhou ◽  
Yoshizo Takai ◽  
Ryuichi Shimizu

Owing to its unique and outstanding physical-chemical properties, diamond is considered to be one of the most important potential materials for applications such as in mechanical, optical, thermal, and electronic devices. Among them, the most attractive application of diamond would be a semiconductor for high temperature and high power electronic devices. To realize such novel devices, a high quality of defect-free single-crystal diamond film is required. Recently, continuous diamond films are found to be able to grow on Pt(lll) substrate. Since the diamond film synthesized on Pt shows a high degree of epitaxy, this approach has drawn the attention of reseafchers in this field and some research results have been reported. However, the heteroepitaxial mechanism is still to be elucidated; in particular, why does diamond grow heteroepitaxially on the Pt substrate and how do the atoms align in the interface between diamond and the Pt substrate? In order to solve those problems, it is very necessary to study the diamond growth mechanism on an atomic scale.


2020 ◽  
Vol 2 (1) ◽  
pp. 7
Author(s):  
Alexander N. Kalashnikov ◽  
Ali Elyounsi ◽  
Alan Holloway

The COVID-19 pandemic imposed various restrictions on the accessibility of conventional teaching laboratories. Enabling learning and experimenting at home became necessary to support the practical element of students’ learning. Unfortunately, it is not viable to provide or share a fully featured sensor lab to every student because of the prohibitive costs involved. Therefore, repurposing electronic devices that are common to students can bring about the sought-after practical learning experience without the hefty price tag. In distinction to the conventional lab instruments, however, consumer-grade devices are not designed for use with external sensors and/or electronic circuitry. They are not professionally maintained, do not undergo periodic safety tests, and are not calibrated. Nevertheless, nearly all modern computers, laptops, tablets or smartphones are equipped with high-quality audio inputs and outputs that can generate and record signals in the audible frequency range (20 Hz–20 kHz). Despite cutting off the direct currents completely, this range might be sufficient for working with a variety of sensors. In this presentation we look at the possibilities of making sure that such repurposing by design prevents any potential harm to the learner and to her or his personal equipment. These features seem essential for unsupervised lone experimenting and avoiding damage to expensive devices.


1985 ◽  
Vol 54 ◽  
Author(s):  
T. P. Smith ◽  
J. M. Phillips ◽  
R. People ◽  
J. M. Gibson ◽  
L. Pfeiffer ◽  
...  

ABSTRACTThe characterization of electronic devices using epitaxial CaF2 on Si is described. In addition, the growth and annealing techniques used to obtain high quality epitaxial films are discussed. In particular, the results of using rapid thermal annealing to improve the epitaxial quality of CaF2 films are presented in detail.The electronic and electrical properties of these structures are very promising. Epitaxial CaF2 films with breakdown fields as high as 3 × 106 V/cm and interface trap densities as low as 7 × 1010cm-2eV-1 have been fabricated. In addition, minority carrier dominated trapping has been observed at the CaF2 /Si interface. Finally, the material properties of these structures, as determined by Rutherford backscattering, channeling, and electron microscopy, are discussed and correlated with their electronic properties.


2010 ◽  
Vol 654-656 ◽  
pp. 1694-1699
Author(s):  
Fan Xiu Lu ◽  
Cheng Ming Li ◽  
Yu Mei Tong ◽  
Wei Zhong Tang ◽  
Guang Chao Chen ◽  
...  

As quasi-thermodynamic equilibrium plasma, DC Arc Plasma has the advantage of very high gas temperature and thus the very high degree of activation of the precursors for diamond film deposition. The present paper reviews the progresses in the R&D of the novel high power dc arc plasma jet CVD system with rotating arc and operated at gas recycling mode for large area high quality diamond film deposition, developed at the University of Science and Technology Beijing (USTB) in the mid 1990s of the 20th century. Thanks to the continuous efforts made in the technological improvement in the past 15 years, considerable progresses have been achieved in the commercialization of this high power dc arcjet CVD system, which is now capable of mass production of large area high quality freestanding diamond films for optical, thermal, and mechanical (tool) applications. The present status in the commercialization and the property level of the resultant diamond films in optical, thermal, mechanical, dielectric, oxidation resistance, sand erosion resistance, and laser damage threshold etc. are presented. Based on the same high power dc arcjet technology, a novel high current extended dc arc plasma (HCEDCA) CVD system has been developed which successfully changed the diamond film deposition mode from 2D planar deposition in to 3D deposition (as confined by two hollow (virtue) columns). It is demonstrated to be advantageous for mass production of diamond thin film coated WC-Co cutting tools. Recent results in the R&D of thin diamond film coated WC-Co drills and end mills, and the results in field tests are discussed.


2011 ◽  
Vol 3 (4) ◽  
pp. 1134-1139 ◽  
Author(s):  
Amélie Veillère ◽  
Thomas Guillemet ◽  
Zhi Qiang Xie ◽  
Craig A. Zuhlke ◽  
Dennis R. Alexander ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3605-3610 ◽  
Author(s):  
S.G. Wang ◽  
P.J. Sellin ◽  
Q. Zhang ◽  
Fan Xiu Lu ◽  
Wei Zhong Tang ◽  
...  

In this study, X-ray detectors with coplanar metal-semiconductor-metal structure, were fabricated employing high quality chemical vapour deposited (CVD) diamond film grown by a direct current arc jet plasma system. In which the electrical contacts with dimension of 25 µm in width with a 25 µm inter-electrode spacing, were patterned on the growth side of the diamond film using lift-off technology. The performance of the fabricated detectors was evaluated by steady-state X-ray illumination. The photoconductivity of the diamond detectors was found to linearly increase with increase in the X-ray photon flux. This demonstrates that high quality CVD diamond can be used for X-ray detectors.


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