Pr(III) luminescence enhancement by chelation in solution and in sol–gel glass

SrTiO3:Pr3+ is the most representative titanate matrix red phosphor for field emission display (FED). The red luminous efficiency of SrTiO3:Pr3+ will be greatly improved after the compensation ions codoping, so SrTiO3:Pr3+ red phosphor has been a research focus at home and abroad. SrTiO3:Pr3+, SrTiO3:Pr3+, Mg2+, and SrTiO3:Pr3+, Al3+ phosphors are synthesized by a new sol-gel method. Crystal structure, spectral characteristics, and luminescence enhancement mechanism of the sample were studied by XRD and PL spectra. The results showed that after co-doped, SrTiO3:Pr3+ phosphor is single SrTiO3 cubic phase, the main emission front is located at 614 nm, corresponding to Pr3+ ions 1D2→3H4 transition emission. SrTiO3:Pr3+, Mg2+ and SrTiO3:Pr3+, Al3+ phosphor luminescence intensity is enhanced, but the main luminescence mechanism is not changed. Acceptor impurity x = Mg2+, Al3+ will replace Ti bit after being doped into the crystal lattice to form XTi- charge compensation corresponding defect centers PrSr+ to reduce the demand of Sr2+ or Ti3+ vacancy. While Sr-doped Pr will make lattice distortion and transition energy of 4f-5d is very sensitive to crystal electric field changes around Pr atom. Doping different impurities will make electric field distribution around the icon have a different change. It increases energy transfer of 4f-5d transition and improves the luminous intensity of SrTiO3:Pr3+ red phosphor.

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TEM visualization of surface replicated acid and base catalyzed sol-gel glasses

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014381x ◽

1986 ◽

Vol 44 ◽

pp. 448-449

Author(s):

George C. Ruben ◽

Merrill W. Shafer

Keyword(s):

Elevated Temperatures ◽

Sol Gel ◽

Basic Medium ◽

Glass Transition Point ◽

Structural Space ◽

Acid And Base ◽

Organometallic Precursors ◽

New Processing ◽

Gel Glasses ◽

Physical Phenomena

Traditionally ceramics have been shaped from powders and densified at temperatures close to their liquid point. New processing methods using various types of sols, gels, and organometallic precursors at low temperature which enable densificatlon at elevated temperatures well below their liquidus, hold the promise of producing ceramics and glasses of controlled and reproducible properties that are highly reliable for electronic, structural, space or medical applications. Ultrastructure processing of silicon alkoxides in acid medium and mixtures of Ludox HS-40 (120Å spheres from DuPont) and Kasil (38% K2O &62% SiO2) in basic medium have been aimed at producing materials with a range of well defined pore sizes (∼20-400Å) to study physical phenomena and materials behavior in well characterized confined geometries. We have studied Pt/C surface replicas of some of these porous sol-gels prepared at temperatures below their glass transition point.

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Electron microscopy studies of PZT ferroelectric film capacitor structures

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131450 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1364-1365

Author(s):

V. Kaushik ◽

P. Maniar ◽

J. Olowolafe ◽

R. Jones ◽

A. Campbell ◽

...

Keyword(s):

Electric Fields ◽

Sol Gel ◽

Ferroelectric Material ◽

Dielectric Constants ◽

Dielectric Films ◽

Lead Zirconium Titanate ◽

Si Substrate ◽

Film Capacitor ◽

Pzt Films ◽

High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

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The crystallization of thin-film ceramics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100122095 ◽

1992 ◽

Vol 50 (1) ◽

pp. 338-339

Author(s):

J.M. Schwartz ◽

L.F. Francis ◽

L.D. Schmidt ◽

P.S. Schabes-Retchkiman

Keyword(s):

Thin Films ◽

Grain Size ◽

Sol Gel ◽

Processing Route ◽

Small Areas ◽

Ceramic Thin Films ◽

Complex Shapes ◽

Sol Gel Process ◽

Ceramic Precursors ◽

Crystalline Ceramic

Ceramic thin films and coatings are of interest for electrical, optical, magnetic and thermal barrier applications. Critical for improved properties in thin films is the development of specific microstructures during processing. To this end, the sol-gel method is advantageous as a versatile processing route. The sol-gel process involves depositing a solution containing metalorganic or colloidal ceramic precursors onto a substrate and heating the deposited layer to form a crystalline or non-crystalline ceramic coating. This route has several advantages, including the ability to create tailored microstructures and properties, to coat large or small areas, simple or complex shapes, and to more easily prepare multicomponent ceramics. Sol-gel derived coatings are amorphous in the as-deposited state and develop their crystalline structure and microstructure during heat-treatment. We are particularly interested in studying the amorphous to crystalline transformation, because many key features of the microstructure such as grain size and grain size distribution may be linked to this transformation.

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