Homogeneous Al2O3 multilayer structures with reinforced mechanical stability for high-performance and high-throughput thin-film encapsulation

2010 ◽  
Vol 62 (7) ◽  
pp. 447-450 ◽  
Author(s):  
Yun-Hyuk Choi ◽  
Young Gu Lee ◽  
Xavier Bulliard ◽  
Kwang-Hee Lee ◽  
Sangyoon Lee ◽  
...  
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.


2017 ◽  
Vol 44 ◽  
pp. 94-98 ◽  
Author(s):  
Peter van de Weijer ◽  
Piet C.P. Bouten ◽  
Sandeep Unnikrishnan ◽  
Hylke B. Akkerman ◽  
Jasper J. Michels ◽  
...  

Author(s):  
Byung-Jae Kim ◽  
Youn-Jea Kim

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) are high performance transparent oxide semiconductors (TOS) that are attractive alternatives to poly-Si TFTs, because they provide better uniformity in terms of device characteristics, such as the threshold voltage and mobility. However, the electrical performance of flexible TFTs should have mechanical robustness against substrate bending and stretching without resultant changes. In this regard, many researchers have focused on improving mechanical stability as well as electrical performance of TFTs, such as elasticity and durability under artificial conditions. In this paper, the mechanical characteristics of an a-IGZO based inverters were numerically investigated. The results were graphically depicted when the device was bent by a total of 10% of its length in the x-axis. The mechanical properties of IGZO were assumed to be similar with the zinc oxide (ZnO).


2020 ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  

Abstract All-inorganic CsPbI3 perovskite quantum dots (QDs) have received intense research interest for photovoltaic applications because of the recently demonstrated higher power conversion efficiency compared to solar cells using other QD materials. These QD devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. In this work, through developing a hybrid interfacial architecture consisting of CsPbI3 QD/PCBM heterojunctions, we report the formation of an energy cascade for efficient charge transfer at both QD heterointerfaces and QD/electron transport layer interfaces. The champion CsPbI3 QD solar cell has a best power conversion efficiency of 15.1%, which is among the highest report to date. Building on this strategy, we demonstrate the very first perovskite QD flexible solar cell with a record efficiency of 12.3%. A detailed morphological characterization reveals that the perovskite QD film can better retain structure integrity than perovskite bulk thin-film under external mechanical stress. This work is the first to demonstrate higher mechanical endurance of QD film compared to bulk thin-film, and highlights the importance of further research on high‐performance and flexible optoelectronic devices using solution-processed QDs.


2019 ◽  
Vol 11 (46) ◽  
pp. 43425-43432 ◽  
Author(s):  
Lina Sun ◽  
Kaho Uemura ◽  
Tatsuhiro Takahashi ◽  
Tsukasa Yoshida ◽  
Yoshiyuki Suzuri

2010 ◽  
Vol 663-665 ◽  
pp. 256-259
Author(s):  
Ying Jie Liao ◽  
Ji Zhong Liu ◽  
Yong Zhang ◽  
Long Li ◽  
Fang Fang Yu ◽  
...  

Color conversion method has been used to fabricate chromatic-stability white organic light-emitting diodes (OLEDs). Experimental results found little CIE coordinate migration while changing operation voltage from 5 V to 12 V. A simple thin-film encapsulation (TFE) structure has been developed through vacuum thermal deposition in combination with plasma enhanced chemical vapor deposition. The luminance of the encapsulated white OLED remain unchanged during the test time. The novel approach is being expected to lower the cost and achieve high-performance TFE.


Author(s):  
K. Ogura ◽  
H. Nishioka ◽  
N. Ikeo ◽  
T. Kanazawa ◽  
J. Teshima

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.


Sign in / Sign up

Export Citation Format

Share Document