UV-illumination and Au-nanoparticles enhanced gas sensing of p-type Na-doped ZnO nanowires operating at room temperature

2018 ◽  
Vol 274 ◽  
pp. 565-574 ◽  
Author(s):  
Cheng-Liang Hsu ◽  
Bo-Yu Jhang ◽  
Cheng Kao ◽  
Ting-Jen Hsueh
2011 ◽  
Vol 364 ◽  
pp. 260-265 ◽  
Author(s):  
T.Y. Tiong ◽  
Chang Fu Dee ◽  
M.M. Salleh ◽  
Majlis B. Yeop ◽  
M. Yahaya

The p-n junction has been formed by using p-type boron doped silicon and n-type ZnO nanowires (NWs). It was prepared by using simple vapour-transport deposition method. Gas sensing property has been examined by measuring the resistance change of the junction sample towards 1 % of butane gas at room temperature. Significant improvement of sensing behaviour was observed from the fabricated junction sample when it was compared to sample of non-p-n junction ZnO NWs. The increase in the sensitivity of the p-n junction ZnO NWs and the ability to regain the sensing power by returning back to the initial state at room temperature are useful for future sensing device with minimum power consumption. Keywords: ZnO nanowires, Si-ZnO nanowires p-n junction, room temperature sensing and butane gas


2012 ◽  
Vol 161 (1) ◽  
pp. 292-297 ◽  
Author(s):  
Jiali Zhai ◽  
Lingling Wang ◽  
Dejun Wang ◽  
Yanhong Lin ◽  
Dongqing He ◽  
...  

2019 ◽  
Vol 6 (1) ◽  
pp. 176-183 ◽  
Author(s):  
Jing Wang ◽  
Mingying Yu ◽  
Xian Li ◽  
Yi Xia

PSS-functionalized ZnO nanowires exhibited a highly sensitive, fast, reversible and stable optoelectronic response to NO2 under UV illumination.


2021 ◽  
Vol 332 ◽  
pp. 129493
Author(s):  
Jae-Hun Kim ◽  
Jin-Young Kim ◽  
Ali Mirzaei ◽  
Hyoun Woo Kim ◽  
Sang Sub Kim

Sensors ◽  
2019 ◽  
Vol 19 (18) ◽  
pp. 3815
Author(s):  
Renyun Zhang ◽  
Magnus Hummelgård ◽  
Joel Ljunggren ◽  
Håkan Olin

Metal-semiconductor junctions and interfaces have been studied for many years due to their importance in applications such as semiconductor electronics and solar cells. However, semiconductor-metal networks are less studied because there is a lack of effective methods to fabricate such structures. Here, we report a novel Au–ZnO-based metal-semiconductor (M-S)n network in which ZnO nanowires were grown horizontally on gold particles and extended to reach the neighboring particles, forming an (M-S)n network. The (M-S)n network was further used as a gas sensor for sensing ethanol and acetone gases. The results show that the (M-S)n network is sensitive to ethanol (28.1 ppm) and acetone (22.3 ppm) gases and has the capacity to recognize the two gases based on differences in the saturation time. This study provides a method for producing a new type of metal-semiconductor network structure and demonstrates its application in gas sensing.


2015 ◽  
Vol 119 (52) ◽  
pp. 29186-29192 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Yu-Xian Lin ◽  
Jia-Jun Wu

2012 ◽  
Vol 26 (13) ◽  
pp. 1250081 ◽  
Author(s):  
LI-BIN SHI

Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation energies, ionization energies and magnetic properties of copper doped ZnO nanowires (NW). It is found from formation energy calculation that n-type Cu-doped ZnO NW is non-FM and p-type Cu-doped ZnO NW could be FM. The results show that total energies of FM coupling are lower than those of AFM coupling for majority of 12 configurations, indicating that the FM coupling between Cu atoms is more stable than AFM coupling. The FM stability is interpreted by Cu 3d energy level coupling. In addition, zinc and oxygen vacancies affecting FM coupling is also discussed. It is found that FM coupling can be tuned by zinc and oxygen vacancies.


2019 ◽  
Vol 285 ◽  
pp. 92-107 ◽  
Author(s):  
Ioannis Kortidis ◽  
Hendrik C. Swart ◽  
Suprakas Sinha Ray ◽  
David E. Motaung

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 317 ◽  
Author(s):  
Haihong Yin ◽  
Changqing Song ◽  
Zhiliang Wang ◽  
Haibao Shao ◽  
Yi Li ◽  
...  

VO2(B), VO2(M), and V2O5 are the most famous compounds in the vanadium oxide family. Here, their gas-sensing properties were investigated and compared. VO2(B) nanoflakes were first self-assembled via a hydrothermal method, and then VO2(M) and V2O5 nanoflakes were obtained after a heat-phase transformation in nitrogen and air, respectively. Their microstructures were evaluated using X-ray diffraction and scanning and transmission electron microscopies, respectively. Gas sensing measurements indicated that VO2(M) nanoflakes were gas-insensitive, while both VO2(B) and V2O5 nanoflakes were highly selective to ammonia at room temperature. As ammonia sensors, both VO2(B) and V2O5 nanoflakes showed abnormal p-type sensing characteristics, although vanadium oxides are generally considered as n-type semiconductors. Moreover, V2O5 nanoflakes exhibited superior ammonia sensing performance compared to VO2(B) nanoflakes, with one order of magnitude higher sensitivity, a shorter response time of 14–22 s, and a shorter recovery time of 14–20 s. These characteristics showed the excellent potential of V2O5 nanostructures as ammonia sensors.


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