Heavily phosphorus-doped silicon nanoparticles as intermediate layer in solar cell based on IFO/p-Si heterojunction

Solar Energy ◽  
2015 ◽  
Vol 122 ◽  
pp. 650-657 ◽  
Author(s):  
A.B. Chebotareva ◽  
G.G. Untila ◽  
T.N. Kost
Keyword(s):  
Solar Cell ◽  
Intermediate Layer ◽  
Silicon Nanoparticles ◽  
Doped Silicon ◽  
Phosphorus Doped

The preparation of a phosphorus doped silicon film from phosphorus containing silicon nanoparticles

2006 ◽  
pp. 658 ◽  
Author(s):  
Richard K. Baldwin ◽  
Jing Zou ◽  
Katherine A. Pettigrew ◽  
Gregory J. Yeagle ◽  
R. David Britt ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Silicon Film ◽  
Phosphorus Containing ◽  
Doped Silicon ◽  
Phosphorus Doped

Solution-processed dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene transistor memory based on phosphorus-doped silicon nanoparticles as a nano-floating gate

2015 ◽  
Vol 8 (10) ◽  
pp. 101601 ◽  
Author(s):  
Yu Kimura ◽  
Azusa Hamaguchi ◽  
Yoshinori Ikeda ◽  
Takashi Nagase ◽  
Hiroyoshi Naito ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Floating Gate ◽  
Solution Processed ◽  
Doped Silicon ◽  
Phosphorus Doped

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Dynamical decoupling of electron spins in phosphorus-doped silicon

2011 ◽  
Vol 56 (7) ◽  
pp. 591-597 ◽  
Author(s):  
Xing Rong ◽  
Ya Wang ◽  
JiaHui Yang ◽  
JinXian Zhu ◽  
WanJie Xu ◽  
...  
Keyword(s):  
Electron Spins ◽  
Dynamical Decoupling ◽  
Doped Silicon ◽  
Phosphorus Doped

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress
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