Influence of Arc Discharge on Contact Resistance of AgNi Contacts for Electromagnetic Contactors

2012 ◽  
Vol E95.C (9) ◽  
pp. 1531-1534 ◽  
Author(s):  
Kiyoshi YOSHIDA ◽  
Koichiro SAWA ◽  
Kenji SUZUKI ◽  
Masaaki WATANABE
Keyword(s):  
Contact Resistance ◽  
Arc Discharge

Influence of arc discharge types on contact resistance

1986 ◽  
Vol 69 (4) ◽  
pp. 30-39 ◽  
Author(s):  
Koichiro Sawa ◽  
Akira Asakawa ◽  
Tadao Uekis ◽  
Kunio Miyachi
Keyword(s):  
Contact Resistance ◽  
Arc Discharge

The Using of Insulated Fiber Bragg Grating Temperature Sensor in 35kV Switch Cabinet

2012 ◽  
Vol 503-504 ◽  
pp. 1055-1060
Author(s):  
Yanr Feng Chen ◽  
Chuan Li ◽  
Yun Shui Xu ◽  
Qing Hua Yan ◽  
Shao Quan Zhang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Temperature Sensor ◽  
Arc Discharge ◽  
Threshold Value ◽  
State Regulations ◽  
Contact Points ◽  
Moving Contact ◽  
Transformer Substation ◽  
Alarm Threshold ◽  
Change Temperature

In long-period running of switch cabinet, the temperature of contact points will be rose by the big contact resistance, poor contact and longtime overloading. Overheat can cause oxidation of contact points and the increasing of contact resistance, and then the contact may be generated the spark and arc discharge. That is a bad circle. So the temperature of contact points can affect the reliability of switch cabinet. For detecting the temperature of contacts and the switch cabinet’s environment in Yanjin transformer substation, we design an Insulated FBG temperature sensor. The surveys of upper reaches indicate that the temperature of moving contact A gets the maximum 32.98°C Aug.20, 2011, the temperature of stationary contact A gets the minimum 5.75°C, and the change temperature between contacts and environment gets the maximum 2.82°C. According to relevant state regulations, the contact’s temperature of 70 °C and temperature’s changes of 35 °C in the case of environment’s temperature below 40°C are Alarm threshold value of switch cabinet.

Influence of arc discharge types on contact resistance of Ag-Pd alloys

1988 ◽  
Vol 71 (9) ◽  
pp. 38-48 ◽  
Author(s):  
Koichiro Sawa ◽  
Makoto Hasegawa ◽  
Kunio Miyachi
Keyword(s):  
Contact Resistance ◽  
Arc Discharge

Influence of Arc Discharge on Contact Erosion and Contact Resistance in a Hybrid DC Switch

2018 ◽  
Author(s):  
Chomrong Ou ◽  
Ryo Nakayama ◽  
Shungo Zen ◽  
Nozomi Takeuchi ◽  
Koichi Yasuoka
Keyword(s):  
Contact Resistance ◽  
Arc Discharge ◽  
Contact Erosion

Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

1987 ◽  
Vol 45 ◽  
pp. 326-327
Author(s):  
A.K. Rai ◽  
A.K. Petford-Long ◽  
A. Ezis ◽  
D.W. Langer
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Microstructural Characterization ◽  
Almost Everywhere ◽  
Spacer Layer ◽  
Good Contact ◽  
The Relationship ◽  
Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

Preparation and characterization of thin films of carbon nitride

1995 ◽  
Vol 53 ◽  
pp. 104-105
Author(s):  
L. Wan ◽  
R. F. Egerton
Keyword(s):  
Carbon Nitride ◽  
Arc Discharge ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Reactive Sputtering ◽  
Vacuum Arc ◽  
Specimen Preparation ◽  
Bonding Structure ◽  
Electron Energy Loss

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.

TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

2003 ◽  
Vol 764 ◽  
Author(s):  
D.N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. Motayed ◽  
S.N. Mohammad
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
X Ray ◽  
Electron Energy Loss Spectrometry ◽  
Resolution Electron ◽  
Order Of Magnitude ◽  
Contact Surfaces ◽  
Electron Energy Loss ◽  
Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

Experimental Investigation and Numerical Simulation on the Role of Sphere Indenter in Measuring Contact Resistance of Flat Rivets

2014 ◽  
Vol E97.C (9) ◽  
pp. 873-879 ◽  
Author(s):  
Wanbin REN ◽  
Yu CHEN ◽  
Shengjun XUE ◽  
Guenther HORN ◽  
Guofu ZHAI
Keyword(s):  
Numerical Simulation ◽  
Experimental Investigation ◽  
Contact Resistance

CHARACTERISTICS OF A CARBON ARC DISCHARGE

2001 ◽  
Vol 5 (2) ◽  
pp. 10 ◽  
Author(s):  
K. Saidane ◽  
H. Lange ◽  
M. Razafinimanana ◽  
A. Huczko ◽  
C. Zedde ◽  
...  
Keyword(s):  
Arc Discharge ◽  
Carbon Arc
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