A compact quasi 3D threshold voltage modeling and performance analysis of a novel linearly graded binary metal alloy quadruple gate MOSFET for subdued short channel effects

2015 ◽  
Vol 82 ◽  
pp. 293-302 ◽  
Author(s):  
Saheli Sarkhel ◽  
Subir Kumar Sarkar
Keyword(s):  
Performance Analysis ◽  
Threshold Voltage ◽  
Metal Alloy ◽  
Short Channel Effects ◽  
Short Channel ◽  
Binary Metal ◽  
Channel Effects ◽  
And Performance

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

2021 ◽  
pp. 54-70
Author(s):  
Raj Kumar ◽  
Shashi Bala ◽  
Arvind Kumar
Keyword(s):  
Performance Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
High Mobility ◽  
Short Channel Effects ◽  
Short Channel ◽  
Comparative Performance ◽  
Channel Effects ◽  
And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Examining the Short Channel Characteristic and Performance of Triple Material Double Gate Silicon-on-Nothing Metal Oxide Semiconductor Field Effect Transistors with Grading Channel Concentration

2019 ◽  
Vol 14 (12) ◽  
pp. 1672-1679 ◽  
Author(s):  
Ningombam Ajit Kumar ◽  
Aheibam Dinamani Singh ◽  
Nameirakpam Basanta Singh
Keyword(s):  
Surface Potential ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel Effects ◽  
Parabolic Approximation ◽  
Short Channel ◽  
Channel Characteristic ◽  
Channel Effects ◽  
And Performance

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects

2019 ◽  
Vol 16 (40) ◽  
pp. 23-27 ◽  
Author(s):  
Yusuke Kobayashi ◽  
Angada B. Sachid ◽  
Kazuo Tsutsui ◽  
Kuniyuki Kakushima ◽  
Parhat Ahmet ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

scholarly journals Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Hojjatollah Sarvari ◽  
Amir Hossein Ghayour ◽  
Zhi Chen ◽  
Rahim Ghayour
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Basis Set ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs) are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

2006 ◽  
Vol 912 ◽  
Author(s):  
Simone Severi ◽  
Emmanuel Augendre ◽  
Bartek Pawlak ◽  
Pierre Eyben ◽  
Taiji Noda ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Laser Annealing ◽  
Short Channel Effects ◽  
Short Channel ◽  
Spacer Length ◽  
Partial Dissolution ◽  
Channel Effects ◽  
Laser Anneal ◽  
And Performance ◽  
Nmos Transistors

AbstractThe advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

Short-Channel Effects in 4H-SiC MOSFETs

2005 ◽  
Vol 483-485 ◽  
pp. 821-824
Author(s):  
Masato Noborio ◽  
Y. Kanzaki ◽  
Jun Suda ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Threshold Voltage ◽  
Empirical Relationship ◽  
Device Simulation ◽  
Oxide Thickness ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Channel Lengths ◽  
P Type

Short-channel effects in SiC MOSFETs have been investigated. Planar MOSFETs with various channel lengths have been fabricated on p-type 4H-SiC (0001), (000-1) and (11-20) faces.^Short-channel effects such as punchthrough behavior, decrease of threshold voltage and deterioration of subthreshold characteristics are observed. Furthermore, the critical channel lengths below which short-channel effects occur are analyzed as a function of p-body doping and oxide thickness by using device simulation. The critical channel lengths in the fabricated SiC MOSFETs are in agreement with those obtained from the device simulation. The results are also in agreement with the empirical relationship for Si MOSFETs.

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