Investigating short channel effects and performance parameters of double gate junctionless transistor at various technology nodes

A 2D surface potential analytical model of a channel with graded channel triple material double gate (GCTMDG) Silicon-on-Nothing (SON) MOSFET is proposed by intermixing the benefits of triple material in gate engineering and graded doping in the channel. The surface potential distribution function of the GCTMDG SON MOSFET is obtained by solving the Poisson's equation, applying suitable boundary conditions, and using a parabolic approximation method. It is seen in the proposed device that the Short Channel Effects (SCEs) are subdued due to the apprehensible step in the surface potential profile that screen the potential of the drain. The effects of the various device parameters are studied to check the merit of the device. For the validation of the proposed device, it is compared with the simulated results of ATLASTM, a device simulator from SILVACO.

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Double-gate junctionless transistor model including short-channel effects

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/5/055011 ◽

2015 ◽

Vol 30 (5) ◽

pp. 055011 ◽

Cited By ~ 14

Author(s):

B C Paz ◽

F Ávila-Herrera ◽

A Cerdeira ◽

M A Pavanello

Keyword(s):

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Junctionless Transistor ◽

Channel Effects ◽

Transistor Model

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Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2007.901075 ◽

2007 ◽

Vol 54 (8) ◽

pp. 1943-1952 ◽

Cited By ~ 66

Author(s):

A. Tsormpatzoglou ◽

C.A. Dimitriadis ◽

R. Clerc ◽

Q. Rafhay ◽

G. Pananakakis ◽

...

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Short-Channel Effects in Symmetric Junctionless Double-Gate FETs

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors ◽

10.1017/9781316676899.009 ◽

2018 ◽

pp. 92-107 ◽

Cited By ~ 1

Keyword(s):

Double Gate ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

Advances in Computer and Electrical Engineering - Innovative Applications of Nanowires for Circuit Design ◽

10.4018/978-1-7998-6467-7.ch003 ◽

2021 ◽

pp. 54-70

Author(s):

Raj Kumar ◽

Shashi Bala ◽

Arvind Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

High Mobility ◽

Short Channel Effects ◽

Short Channel ◽

Comparative Performance ◽

Channel Effects ◽

And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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A New Approach to the Characteristics and Short-Channel Effects of Double-Gate Carbon Nanotube Field-Effect Transistors using MATLAB: A Numerical Study

Zeitschrift für Naturforschung A ◽

10.5560/zna.2012-0024 ◽

2012 ◽

Vol 67 (6-7) ◽

pp. 317-326 ◽

Cited By ~ 1

Author(s):

Alireza Heidari ◽

Niloofar Heidari ◽

Foad Khademi Jahromi ◽

Roozbeh Amiri ◽

Mohammadali Ghorbani

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

Open Boundary ◽

Double Gate ◽

Short Channel Effects ◽

Drain Voltage ◽

Short Channel ◽

Channel Effects ◽

The Impact

In this paper, first, the impact of different gate arrangements on the short-channel effects of carbon nanotube field-effect transistors with doped source and drain with the self-consistent solution of the three-dimensional Poisson equation and the Schr¨odinger equation with open boundary conditions, within the non-equilibrium Green function, is investigated. The results indicate that the double-gate structure possesses a quasi-ideal subthreshold oscillation and an acceptable decrease in the drain induced barrier even for a relatively thick gate oxide (5 nm). Afterward, the electrical characteristics of the double-gate carbon nanotube field-effect transistors (DG-CNTFET) are investigated. The results demonstrate that an increase in diameter and density of the nanotubes in the DG-CNTFET increases the on-state current. Also, as the drain voltage increases, the off-state current of the DG-CNTFET decreases. In addition, regarding the negative gate voltages, for a high drain voltage, increasing in the drain current due to band-to-band tunnelling requires a larger negative gate voltage, and for a low drain voltage, resonant states appear

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