Safe and Secure Home Automation Through IoT Applications

In current conditions, robotization has changed into the fundamental piece of our lives. Everybody is completely subject to mechanization whether it is an extraordinary bundling or home robotization. So as to bring home automation into thought, everybody now needs a heterogeneous state security, and in our task on residential robotization, such high security highlights are completely on the best possible consumption for this reason. In light of the structure of the interruption zone, there are some fundamental interests in it. Piezoelectric sensors are compelling for sharpening appropriated wellbeing checking and structures. An intrusion detection system (IDS) is a structure that screen for suspicious movement and issues alarms when such advancement is found. While impossible to miss worthiness and presentation is, some obstruction divulgence structures are fit to take practice when poisonous improvement or peculiar action is perceived.

Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

Soft Error-Resilient RHBD16T SRAM Cell in 32nm Technology

Radiation environment generates high soft error rates in conventional SRAM. To overcome this issue, several radiation hardened by design SRAM circuits (12TRHBD, 13TRHBD, DICE, etc.) have been developed. Although many of the radiation hardened SRAM cells are there, all the circuits mainly concern a single node upset only. In this chapter, 16T radiation hardened static random-access memory bit cell is designed and verified for a single node and multi-node upset. RHBD 16T bit cell is designed with SAED-PDK 32nm technology and compared with recently reported RHBD 12T and has a 99% improvement in recovery rate. Simulation results show that RHBD 16T is more resilient to a single node and multi-node upset. This shows that the proposed RHBD16T cell is highly tolerant against radiation strikes.

Various Applications of Nanowires

In this era of nanotechnology, nanowires (NWs) propose potential impact on electronics, computing, memory, data storage, communications, manufacturing, health, medicine, national security, and other economic sectors as well. NWs offer excellent surface-to-volume ratio (interface phenomena), low defect density, high optical output, and controllable n-type conductivity, making them more appropriate and sensitive for sensing applications. NWs with their ultra-sensitive and real-time detection capabilities lend their applications in nanobiosensors, chemical sensors, gas sensors, and electrochemical sensors. NWs have been used in improving the optical absorption as well as for the collection efficacy in photovoltaic devices. NWs having small size, low weight, low cost for mass production, and are also compatible with commercial planar processes for large-scale circuitry. In the chapter, the authors are focusing to summarize the recent advances in NWs with their potential applications in various fields such as research, health, security, education, entertainment, and power generation.

Brace of Nanowire FETs in the Advancements and Miniaturizations of Recent Integrated Circuits Design

This chapter encompasses the gradual requirements, basic working principle, inbuilt physics, structural and functional characteristics, and applications of nanowires, especially that of semiconductor nanowires in depth. Today, research and development in material science and electronics going hand in hand have opened up numerous directions for the exploration and utilization of several unique semiconducting materials in the design of novel field-effect-transistors (FETs) in the nano-scale architecture. The performance results of the basic NWFETs structures and hetero-structures along with methods to organize nanowires in the form of arrays to fulfill the requirement of integration of devices and circuits are described in detail. This chapter would be beneficial for students of undergraduate and postgraduate, researchers, and the industrial peoples as well who are working in the regime of the advancement of semiconductor technology because every aspect of nanowire and NWFETs is discussed here deeply in a single platform.

Design and Simulation Analysis of NWFET for Digital Application

This chapter presents the design and simulation analysis nanowire-based FET (NWFET) for best possible Ig-Vgs characteristics. A NWFET is a device in which channel is wire-like structure with diameter or lateral dimension in nanometer (10-9 m) range. Performance analysis has been done for various design and process parameters variation to propose optimized parameter for best performance. Although a lot of focus has been put on homogenous Si based NWFETs, there has been a rising interest in III-V NWFETs. This is mainly due to the excellent carrier transport properties are provided by these materials. NWFETs have ability to suppress SCEs and are also good in suppressing OFF-current (IOFF), because of gate all around (GAA) configuration. Secondly, NWFETs have large ON-current (ION) due to quasi one-dimensional (1D) conduction of NWs, and as a result of low carrier scattering, conduction of NWs-based devices is very large.

III-V-Based Gate-All-Around Cylindrical Nanowire Junctionless Field Effect Transistor

This chapter represents some essential aspects of nanowires and their transport properties. Scaling of MOSFETs becomes a huge problem for industries due to short channel effects (SCEs) and sub-threshold leakage current. So, nanowires become a good solution to SCEs due to their structure. This chapter is divided into three parts. The first part gives a brief introduction of nanowire and different materials that can replace Si (channel material) and SiO2 (oxide material) due to their superior performance over Si. In the second part, the device structure and device structural measurement is discussed. In the third part, transport properties are discussed. This chapter shows the behavior of nanowire on changing different device materials and device dimensions. Electrical characteristics of Si and III-V based nanowires FETs will be analyzed and compared. High-k dielectric as oxide material also helps in improving device performance. HfO2 shows improvement in device characteristics over SiO2 taken as an oxide material. Junctionless nanowire MOSFET has also been designed and analyzed.

Diameter Dependent Ultrasonic Investigation of SiC Nanowires

Despite various methods available theoretically and experimentally for material characterization, the ultrasonic characterization method has proven as one of important method because of its non-destructive evaluation (NDE) technique. This chapter explores the ultrasonic characterization of wide band gap semiconducting material SiC at nanoscale. In the present chapter, diameter dependent nonlinear elastic properties (second and third order elastic constants), thermophysical properties, and ultrasonic properties of single crystalline SiC-nanowires have been computed using Lennard-Jones potentials in the high temperature regime. The size dependent mechanical and ultrasonic properties of the SiC-nanowires and their mechanical stability has also been estimated using the higher order elastic constants of the material. The correlation between size dependent ultrasonic attenuation and thermophysical properties have been established for the SiC-nanowires. Obtained results are discussed in correlation with available theoretical/experimental results for application in nanodevices.

Introduction to Nanowires

This chapter describes nanowires (NWs), their types, characteristic features, and their use in sensor and transistor applications as well. Introductory part in general explains briefly about nanowires (NWs), their characteristics features, types, as well as their most significant properties. The types of nanowires (NWs) can be of conducting materials such as Ni, Pt, Au; semiconducting materials like Si, InP, GaN; as well as insulating materials like that of SiO2, TiO2, etc. The property of nanowires includes mechanical, electrical, chemical, optical, and thermal properties. Also, a small description of nanowires (NWs) and sensors are explained with their performance parameters. Furthermore, nanowires (NWs)-based transistors are discussed in addition with their characteristics and applications. Finally, this chapter concludes with the significance of nanowires (NWs) in contemporary era.