Fabrication of preferential orientation ZnO thin films with exposed holes by high temperature annealing low-temperature-grown ZnO thin films on different substrates

2019 ◽  
Vol 136 ◽  
pp. 106291 ◽  
Author(s):  
Weijia Yang ◽  
Junjie Liu ◽  
Mingquan Liu ◽  
Yanyi Liu ◽  
Nuoyuan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperature ◽  
Preferential Orientation ◽  
Zno Thin Films ◽  
High Temperature Annealing

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing

2017 ◽  
Vol 695 ◽  
pp. 2232-2237 ◽  
Author(s):  
C.L. Heng ◽  
T. Wang ◽  
W.Y. Su ◽  
H.C. Wu ◽  
M.C. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
Doped Zno

The Template Technique Applied to Epitaxial Growth of CrSi2 on Silicon (111)

1993 ◽  
Vol 317 ◽  
Author(s):  
John E. Manan ◽  
Robert G. Long ◽  
André Vantomme ◽  
Marc-A. Nicolet
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Film Formation ◽  
The Other ◽  
High Temperature Annealing ◽  
Growth Technique ◽  
Reactive Deposition ◽  
Chromium Evaporation

ABSTRACTThe template growth technique was applied to the growth of CrSi2 thin films on Si(111) by UHV E-gun evaporation. A 4He+ channeling yield of -50% was obtained for an epitaxial -2100 Å-thick film of continuous morphology grown at 450° C The heteroepitaxial relationship is CrSi2 (001) / Si (lll) with CrSi2[210] ∥ Si<110>.In the case of film formation simply via reactive deposition epitaxy (RDE, chromium evaporation onto hot substrates) a severe crystallinity-Morphology tradeoff is always observed. Continuous films are formed at low temperature but no long-range epitaxy is found. On the other hand, high temperature annealing of these films induces the formation of islands that show good epitaxial alignment with the substrate. This tradeoff was addressed with the template growth technique.

scholarly journals Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

2017 ◽  
Vol 7 (8) ◽  
pp. 3041 ◽  
Author(s):  
C. L. Heng ◽  
W. Xiang ◽  
W. Y. Su ◽  
H. C. Wu ◽  
Y. K. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Temperature Annealing ◽  
Edge Emission ◽  
Doped Zno ◽  
Co Doped

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

High Temperature Effects in Li-Doped ZnO Thin Films

2004 ◽  
Vol 63 (1) ◽  
pp. 209-213 ◽  
Author(s):  
A. DEYNEKA ◽  
Z. HUBICKA ◽  
M. CADA ◽  
G. SUCHANECK ◽  
M. SAVINOV ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Effects ◽  
Zno Thin Films ◽  
Doped Zno
Sign in / Sign up

Export Citation Format

Share Document