Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

Download Full-text

GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583761 ◽

1987 ◽

Vol 5 (3) ◽

pp. 822 ◽

Cited By ~ 32

Author(s):

N. Chand

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Avalanche Photodiodes ◽

Crystalline Quality

Download Full-text

Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽

10.1063/1.5005970 ◽

2017 ◽

Vol 7 (10) ◽

pp. 105020 ◽

Cited By ~ 6

Author(s):

Z. P. Zhang ◽

Y. X. Song ◽

Y. Y. Li ◽

X. Y. Wu ◽

Z. Y. S. Zhu ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Structural Properties ◽

Thermal Annealing ◽

Molecular Beam

Download Full-text

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-102-355 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

M. Cerullo ◽

Julia M. Phillips ◽

M. Anzlowar ◽

L. Pfeiffer ◽

J. L. Batstone ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

High Vacuum ◽

Processing Technique ◽

Ultra High Vacuum ◽

On Line ◽

High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Download Full-text

Rapid thermal annealing of GaNxAs1−x grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

Journal of Applied Physics ◽

10.1063/1.1454193 ◽

2002 ◽

Vol 91 (8) ◽

pp. 4900-4903 ◽

Cited By ~ 47

Author(s):

W. K. Loke ◽

S. F. Yoon ◽

S. Z. Wang ◽

T. K. Ng ◽

W. J. Fan

Keyword(s):

Molecular Beam Epitaxy ◽

Radio Frequency ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Radio Frequency Plasma ◽

Frequency Plasma

Download Full-text

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

MRS Proceedings ◽

10.1557/proc-144-391 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 4

Author(s):

B.J. Skromme ◽

N.G. Stoffel ◽

A.S. Gozdz ◽

M.C. Tamargo ◽

S.M. Shibli

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Ion Implantation ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Vacancy Formation ◽

Annealing Temperatures ◽

The Creation ◽

Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

Download Full-text