Giant enhancement of the n-type conductivity in single phase p-type ZnO:N thin films by intentionally created defect clusters and pairs

2015 ◽  
Vol 218 ◽  
pp. 20-24 ◽  
Author(s):  
Subodh K. Gautam ◽  
R.G. Singh ◽  
V.V. Siva Kumar ◽  
Fouran Singh
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Type Conductivity ◽  
Defect Clusters ◽  
P Type

Energy band engineering and controlled p‐type conductivity of CuAlO2 thin films by nonisovalent Cu‐O alloying

2012 ◽  
Vol 100 (6) ◽  
pp. 062102 ◽  
Author(s):  
Z. Q. Yao ◽  
B. He ◽  
L. Zhang ◽  
C. Q. Zhuang ◽  
T. W. Ng ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Band ◽  
Type Conductivity ◽  
Band Engineering ◽  
P Type

The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
First Principles ◽  
Zno Thin Films ◽  
First Principles Calculations ◽  
Type Conductivity ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.

Reversible p -type conductivity in H passivated nitrogen and phosphorous codoped ZnO thin films using rapid thermal annealing

2017 ◽  
Vol 400 ◽  
pp. 312-317 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
E. Senthil Kumar ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films ◽  
Type Conductivity ◽  
P Type

Defects in CdTe-Based Photodetectors

1999 ◽  
Vol 607 ◽  
Author(s):  
V. Valdna
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
High Resistivity ◽  
Photoluminescence Spectra ◽  
Type Conductivity ◽  
Complex Defect ◽  
Neutral Defect ◽  
P Type ◽  
Charged Defects ◽  
Thick Layers

AbstractThe photoluminescence spectra, defect composition and optoelectronic properties of chlorine doped CdTe monocrystals, thick layers and thin films are investigated. It is supposed that the complex defect (VCd-2ClTe) is a neutral defect that causes high resistivity of Cl doped CdTe. This complex can dissociate into two charged defects (VCd-ClTe) and ClTe at 300 K. Acentre (VCd-ClTe) is a stable defect that is responsible for p-type conductivity of Cl doped CdTe. Depending on the C1 concentration high resistivity, high photoconductivity or high p-type conductivity can be formed in CdTe that is only chlorine doped.

P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

2013 ◽  
Vol 2 (11) ◽  
pp. R249-R253 ◽  
Author(s):  
Jui-Fen Chien ◽  
Huan-Yu Shih ◽  
Hua-Yang Liao ◽  
Ray-Ming Lin ◽  
Jing-Jong Shyue ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Type Conductivity ◽  
P Type
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