P-type Conductivity of MgZnO:(N:Ga) Thin Films Prepared by Remote Plasma In-Situ Atomic Layer Doping

2013 ◽  
Vol 2 (11) ◽  
pp. R249-R253 ◽  
Author(s):  
Jui-Fen Chien ◽  
Huan-Yu Shih ◽  
Hua-Yang Liao ◽  
Ray-Ming Lin ◽  
Jing-Jong Shyue ◽  
...  
Rare Metals ◽  
2006 ◽  
Vol 25 (6) ◽  
pp. 110-114 ◽  
Author(s):  
C LEE ◽  
J LIM ◽  
S PARK ◽  
H KIM

2014 ◽  
Vol 26 (21) ◽  
pp. 6088-6091 ◽  
Author(s):  
Jeong Hwan Han ◽  
Yoon Jang Chung ◽  
Bo Keun Park ◽  
Seong Keun Kim ◽  
Hyo-Suk Kim ◽  
...  

2004 ◽  
Vol 96 (4) ◽  
pp. 2323-2329 ◽  
Author(s):  
Seong Keun Kim ◽  
Cheol Seong Hwang
Keyword(s):  

2012 ◽  
Vol 100 (6) ◽  
pp. 062102 ◽  
Author(s):  
Z. Q. Yao ◽  
B. He ◽  
L. Zhang ◽  
C. Q. Zhuang ◽  
T. W. Ng ◽  
...  

2015 ◽  
Vol 17 (26) ◽  
pp. 16705-16708 ◽  
Author(s):  
Wenzhe Niu ◽  
Hongbin Xu ◽  
Yanmin Guo ◽  
Yaguang Li ◽  
Zhizhen Ye ◽  
...  

The S dopants in S–N co-doped ZnO contribute to easier doping and p-type conductivity, as concluded by experiment and calculations.


1991 ◽  
Vol 222 ◽  
Author(s):  
Masaki Kanai ◽  
Tomoji Kawai ◽  
Takuya Matsumoto ◽  
Shichio Kawai

ABSTRACTThin films of (Ca,Sr)CuO2 and Bi2Sr2Can-1CunO2n+4 are formed by laser molecular beam epitaxy with in-situ reflection high energy electron diffraction observation. The diffraction pattern shows that these materials are formed with layer-by-layer growth. The change of the diffraction intensity as well as the analysis of the total diffraction pattern makes It possible to control the grown of the atomic layer or the unit-cell layer.


Sign in / Sign up

Export Citation Format

Share Document