A unified 3D device simulation of random dopant, interface trap and work function fluctuations on high-к/metal gate device

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131495 ◽

2011 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Chun-Yen Yiu ◽

Hsin-Wen Su

Keyword(s):

Work Function ◽

Device Simulation ◽

Interface Trap ◽

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3D device simulation of work function and interface trap fluctuations on high-κ / metal gate devices

2010 International Electron Devices Meeting ◽

10.1109/iedm.2010.5703370 ◽

2010 ◽

Author(s):

Hui-Wen Cheng ◽

Fu-Hai Li ◽

Ming-Hung Han ◽

Chun-Yen Yiu ◽

Chia-Hui Yu ◽

...

Keyword(s):

Work Function ◽

Device Simulation ◽

Interface Trap ◽

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Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2036309 ◽

2010 ◽

Vol 57 (2) ◽

pp. 437-447 ◽

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Tien-Yeh Li ◽

Ming-Hung Han

Keyword(s):

Work Function ◽

Process Variation ◽

Random Dopant Fluctuation ◽

Gate Work Function ◽

Function Fluctuation ◽

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Process variation effect, metal-gate work-function fluctuation and random dopant fluctuation of 10-nm gate-all-around silicon nanowire MOSFET devices

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409827 ◽

2015 ◽

Author(s):

Yiming Li ◽

Han-Tung Chang ◽

Chun-Ning Lai ◽

Pei-Jung Chao ◽

Chieh-Yang Chen

Keyword(s):

Work Function ◽

Process Variation ◽

Silicon Nanowire ◽

Random Dopant Fluctuation ◽

Silicon Nanowire Mosfet ◽

Nanowire Mosfet ◽

Gate Work Function ◽

Function Fluctuation ◽

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Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2063270 ◽

2010 ◽

Vol 57 (10) ◽

pp. 2515-2525 ◽

Author(s):

Hamed F Dadgour ◽

Kazuhiko Endo ◽

Vivek K De ◽

Kaustav Banerjee

Keyword(s):

Work Function ◽

Circuit Design ◽

Grain Orientation ◽

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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Analysis of USJ Formation with Combined RTA/Laser Annealing Conditions for 28nm High-K/Metal Gate CMOS Technology Using Advanced TCAD for Process and Device Simulation

2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) ◽

10.1109/istdm.2012.6222439 ◽

2012 ◽

Author(s):

E. M. Bazizi ◽

S. M. Pandey ◽

C. Wang ◽

I. Jiang ◽

S. Chu ◽

...

Keyword(s):

Laser Annealing ◽

Device Simulation ◽

Cmos Technology ◽

Annealing Conditions ◽

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Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

IEEE Electron Device Letters ◽

10.1109/led.2007.909852 ◽

2007 ◽

Vol 28 (12) ◽

pp. 1089-1091 ◽

Author(s):

R. Singanamalla ◽

H. Y. Yu ◽

B. Van Daele ◽

S. Kubicek ◽

K. De Meyer

Keyword(s):

Ion Implantation ◽

Work Function ◽

Effective Work ◽

Effective Work Function ◽

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Investigating doping effects on high-κ metal gate stack for effective work function engineering

Solid-State Electronics ◽

10.1016/j.sse.2013.04.011 ◽

2013 ◽

Vol 88 ◽

pp. 21-26 ◽

Author(s):

C. Leroux ◽

S. Baudot ◽

M. Charbonnier ◽

A. Van Der Geest ◽

P. Caubet ◽

...

Keyword(s):

Work Function ◽

Effective Work ◽

Effective Work Function ◽

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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282848 ◽

2006 ◽

Author(s):

R. Tanabe ◽

Y. Ashizawa ◽

H. Oka

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Sram Cell ◽

Random Dopant Fluctuations ◽

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Electronic structure and work function of metal gate Mo–W system

Applied Physics Letters ◽

10.1063/1.2776851 ◽

2007 ◽

Vol 91 (9) ◽

pp. 092106 ◽

Author(s):

H. R. Gong ◽

Kyeongjae Cho

Keyword(s):

Electronic Structure ◽

Work Function ◽

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