Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS

2014 ◽  
Vol 99 ◽  
pp. 1-6 ◽  
Author(s):  
Ł. Gelczuk ◽  
P. Kamyczek ◽  
E. Płaczek-Popko ◽  
M. Dąbrowska-Szata
Keyword(s):  
Deep Level ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

Barrier inhomogeneities and electrical characteristics of Ti/4H-SiC Schottky rectifiers

1999 ◽  
Vol 46 (3) ◽  
pp. 449-455 ◽  
Author(s):  
D. Defives ◽  
O. Noblanc ◽  
C. Dua ◽  
C. Brylinski ◽  
M. Barthula ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities

Investigation on barrier inhomogeneities in 4H-SiC Schottky rectifiers

2006 ◽  
Vol 203 (3) ◽  
pp. 643-650 ◽  
Author(s):  
Xianyun Ma ◽  
Priyamvada Sadagopan ◽  
Tangali S. Sudarshan
Keyword(s):  
Schottky Rectifiers ◽  
Barrier Inhomogeneities

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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