Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode

2012 ◽  
Vol 711 ◽  
pp. 188-192
Author(s):  
Muhammad Yousuf Zaman ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Effective Area ◽  
Medium Size ◽  
Current Voltage ◽  
Significant Difference ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics

Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

scholarly journals Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 636
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Muhammad Haroon Rashid
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Doping Profile ◽  
Structural Defects ◽  
Diffusion Welding ◽  
Native Oxide Layer ◽  
Electrical Characteristics ◽  
Discrete Energy Level ◽  
P Type

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on the p-type 4H-SiC substrate with a novel technology; DW. The electrical properties of physically fabricated Al-Foil/4H-SiC SBD have been investigated. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics based on the thermionic emission model in the temperature range (300 K–450 K) are investigated. It has been found that the ideality factor and barrier heights of identically manufactured Al-Foil/p-type-4H-SiC SBDs showing distinct deviation in their electrical characteristics. An improvement in the ideality factor of Al-Foil/p-type-4H-SiC SBD has been noticed with an increase in temperature. An increase in barrier height in fabricated SBD is also observed with an increase in temperature. We also found that these increases in barrier height, improve ideality factors and abnormalities in their electrical characteristics are due to structural defects initiation, discrete energy level formation, interfacial native oxide layer formation, inhomogenous doping profile distribution and tunneling current formation at the SiC sufaces.

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

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