Threshold voltage and transconductance shifting reliance on strained-SiGe channel dimension

Recent progress in the computer simulation of strained SiGe channel p-MOSFET performance is reviewed. The electrical characteristics of strained SiGe channel p-MOSFET, such as threshold voltage, subthreshold characteristics, output characteristics, transconductance, quasistatic C-V characteristics and transfer characteristics, and the effects of Ge mole fraction on electrical characteristics, are well discussed. Finally, the development of strained SiGe channel p-MOSFET is prospected.

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Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage

Acta Physica Sinica ◽

10.7498/aps.63.237302 ◽

2014 ◽

Vol 63 (23) ◽

pp. 237302

Author(s):

Liu Xiang-Yu ◽

Hu Hui-Yong ◽

Zhang He-Ming ◽

Xuan Rong-Xi ◽

Song Jian-Jun ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Strained Sige

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Analytical Threshold Voltage Models for Strained Si/Strained Si1-xGex/Relaxd Si1-yGey PMOSFET

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.110-116.5447 ◽

2011 ◽

Vol 110-116 ◽

pp. 5447-5451

Author(s):

Shan Shan Qin ◽

He Ming Zhang ◽

Hui Yong Hu ◽

Xiao Yan Wang ◽

Guan Yu Wang

Keyword(s):

Threshold Voltage ◽

Hole Mobility ◽

Oxide Semiconductor ◽

Strained Si ◽

Dual Channel ◽

Buried Channel ◽

Strong Inversion ◽

Effect Transistor ◽

P Type ◽

Strained Sige

Threshold voltage models for both buried channel and surface channel for the dual-channel strained Si/strained Si1-xGex/relaxd Si1-yGey(s-Si/s-SiGe/Si1-yGey) p-type metal-oxide-semiconductor field-effect transistor (PMOSFET) are presented in this paper. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel (compressive strained SiGe) than in the surface channel, because the hole mobility in the buried channel is higher than that the surface channel. They offer a good accuracy as compared with the results of device simulator ISE.

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Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1107.496 ◽

2015 ◽

Vol 1107 ◽

pp. 496-501

Author(s):

Saad Ismail ◽

Chan Bun Seng ◽

Hamzah Mohd Zuhir ◽

Nurmin Bolong ◽

Khairul Anuar Mohamad ◽

...

Keyword(s):

Mole Fraction ◽

Threshold Voltage ◽

Impact Ionization ◽

Single Channel ◽

Sige Layer ◽

Electrical Characteristics ◽

New Paradigm ◽

Dual Channel ◽

Suitable Amount ◽

Strained Sige

The effect of the Ge mole fraction in a Si1-xGexon single and dual channel Vertical Strained SiGe Impact Ionization MOSFET was successfully analyzed. It is found that the threshold voltage, breakdown voltage and sub-threshold slope of the devices was affected by the presence of the Germanium. A better performance in sub-threshold voltage of the devices was obtained for dual channel VESIMOS compared to single channel VESIMOS with a suitable amount of Germanium. Germanium has high and symmetric impact ionization rates to ensure the transition from OFF state to ON state is abrupt. With the appearance of the SiGe layer in the devices, has an advantage of the mobility enhancement of carriers in the devices operation. With the improvement of the Ge composition, it could transform VESIMOS into a new paradigm of devices which applicable to nanoelectronics with better electrical characteristics.

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