Nanocomposite Au-ZnO thin films: Influence of gold concentration and thermal annealing on the microstructure and plasmonic response

2020 ◽  
Vol 385 ◽  
pp. 125379 ◽  
Author(s):  
Patrícia Pereira-Silva ◽  
Joel Borges ◽  
Marco S. Rodrigues ◽  
João C. Oliveira ◽  
Eduardo Alves ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Gold Concentration

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Improved Electrical Conduction Properties in Unintentionally-doped ZnO Thin Films Treated by Rapid Thermal Annealing

2011 ◽  
Vol 59 (4) ◽  
pp. 2774-2777 ◽  
Author(s):  
Youngmin Lee ◽  
Choeun Lee ◽  
Eunhee Shim ◽  
Eiwhan Jung ◽  
Jinyong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Conduction ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Conduction Properties

Thermal Annealing Effects of Initial Zn Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Annealing Effects

Effect of thermal annealing on the properties of ZnO thin films

Vacuum ◽  
2021 ◽  
Vol 183 ◽  
pp. 109776
Author(s):  
Weon Cheol Lim ◽  
Jitendra Pal Singh ◽  
Younghak Kim ◽  
Jonghan Song ◽  
Keun Hwa Chae ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Zno Thin Films

Effects of Thermal Annealing in Oxygen Plasma for Buffer Layers on Properties of ZnO Thin Films

2011 ◽  
Vol 11 (10) ◽  
pp. 8859-8863
Author(s):  
Ghun Sik Kim ◽  
Min Su Kim ◽  
Hyun Young Choi ◽  
Min Young Cho ◽  
Kwang Gug Yim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Oxygen Plasma ◽  
Buffer Layers ◽  
Zno Thin Films
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