Effects of Thermal Annealing in Oxygen Plasma for Buffer Layers on Properties of ZnO Thin Films

2011 ◽  
Vol 11 (10) ◽  
pp. 8859-8863
Author(s):  
Ghun Sik Kim ◽  
Min Su Kim ◽  
Hyun Young Choi ◽  
Min Young Cho ◽  
Kwang Gug Yim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Oxygen Plasma ◽  
Buffer Layers ◽  
Zno Thin Films

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

Improved Electrical Conduction Properties in Unintentionally-doped ZnO Thin Films Treated by Rapid Thermal Annealing

2011 ◽  
Vol 59 (4) ◽  
pp. 2774-2777 ◽  
Author(s):  
Youngmin Lee ◽  
Choeun Lee ◽  
Eunhee Shim ◽  
Eiwhan Jung ◽  
Jinyong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electrical Conduction ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Conduction Properties

Thermal Annealing Effects of Initial Zn Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Annealing Effects

Effect of thermal annealing on the properties of ZnO thin films

Vacuum ◽  
2021 ◽  
Vol 183 ◽  
pp. 109776
Author(s):  
Weon Cheol Lim ◽  
Jitendra Pal Singh ◽  
Younghak Kim ◽  
Jonghan Song ◽  
Keun Hwa Chae ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Zno Thin Films

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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