Identification of iron oxide phases in thin films grown on Al2O3(0001) by Raman spectroscopy and X-ray diffraction

2010 ◽  
Vol 604 (7-8) ◽  
pp. 679-685 ◽  
Author(s):  
Maike Lübbe ◽  
Alexander M. Gigler ◽  
Robert W. Stark ◽  
Wolfgang Moritz
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Iron Oxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxide Phases

scholarly journals Spin transitions in La0.7 Ba0.3CoO3 thin films revealed by combining Raman spectroscopy and X-ray diffraction

2016 ◽  
Vol 120 (1) ◽  
pp. 015308 ◽  
Author(s):  
Zied Othmen ◽  
Olivier Copie ◽  
Kais Daoudi ◽  
Michel Boudard ◽  
Pascale Gemeiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Transitions

Study on integration of aluminum-doped zinc oxide (AZO) thin films with graphene oxide (GO)

2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Aluminum Doped Zinc Oxide ◽  
Uv Visible

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy

2007 ◽  
Vol 516 (1) ◽  
pp. 91-98 ◽  
Author(s):  
Shramana Mishra ◽  
Alka Ingale ◽  
U.N. Roy ◽  
Ajay Gupta
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cds Thin Films ◽  
Induced Changes

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Examination of Titanium Oxides, Lead Oxides and Lead Titanates Using X-Ray Diffraction and Raman Spectroscopy

1993 ◽  
Vol 310 ◽  
Author(s):  
Lynnette D. Madsen ◽  
Louise Weaver
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Vapour Deposition ◽  
Mixed Oxides ◽  
Chemical Vapour ◽  
Titanium Oxides ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lead Oxides ◽  
Metalorganic Chemical Vapour Deposition

AbstractSingle oxides (with titanium or lead) deposited as thin films by low pressure metalorganic chemical vapour deposition were investigated by x-ray diffraction and Raman spectroscopy. Examination of mixed oxides (titanates) and silicates were also carried out using these techniques. The crystallographic nature of these thin films were examined and comparisons made to their bulk counterparts. The deposition and anneal conditions 600 for producing cubic PbTiO3 films are discussed briefly.

STUDIES ON THE TiO2 THIN FILMS DOPED WITH Fe3+

2005 ◽  
Vol 19 (01n03) ◽  
pp. 671-673
Author(s):  
PENG XIAO ◽  
WANLU WANG
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Properties ◽  
Sol Gel ◽  
Experimental Results ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
X Ray ◽  
Nanometer Particles

The Fe 3+- TiO 2 thin films obtained through sol-gel method were characterized by x-ray diffraction, AFM and Raman spectroscopy. It was found that TiO 2 films consisted of nanometer particles. The experimental results shows that the nanometer TiO 2 thin films doped with Fe 3+ were greatly improved in the activity aspect. This may be ascribed to change their structure and electrical properties after doping with Fe 3+. The results were discussed theoretically in detail.

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