Probing the role of C+ ion energy, thickness and graded structure on the functional and microstructural characteristics of ultrathin carbon films (<2nm)

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

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An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

MRS Proceedings ◽

10.1557/proc-719-f8.36 ◽

2002 ◽

Vol 719 ◽

Author(s):

Myoung-Woon Moon ◽

Kyang-Ryel Lee ◽

Jin-Won Chung ◽

Kyu Hwan Oh

Keyword(s):

Cross Sections ◽

Focused Ion Beam ◽

Imaging System ◽

Ion Beam ◽

Carbon Films ◽

Diamond Like Carbon ◽

Glass Substrates ◽

Atomic Force ◽

Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

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Large Area Surface Treatment by Ion Beam Technology

MRS Proceedings ◽

10.1557/proc-438-611 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 2

Author(s):

R. L. C. Wu ◽

W. Lanter

Keyword(s):

Ion Beam ◽

High Vacuum ◽

Polycrystalline Diamond ◽

Carbon Films ◽

Ultra High Vacuum ◽

Diamond Like Carbon ◽

Chemical Compositions ◽

Rf Power ◽

Large Area ◽

Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

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Molecular Dynamics Study of Ion Impact Phenomena and Compressive Stress in Thin Films

MRS Proceedings ◽

10.1557/proc-317-497 ◽

1993 ◽

Vol 317 ◽

Cited By ~ 1

Author(s):

N.A. Marks ◽

P. Guan ◽

D.R. Mckenzie ◽

B.A. PailThorpe

Keyword(s):

Molecular Dynamics ◽

Three Dimensional ◽

Carbon Films ◽

Loss Mechanism ◽

Ion Energy ◽

Lennard Jones ◽

Impact Phenomena ◽

Ion Impact ◽

Dynamics Simulations ◽

The Impact

ABSTRACTMolecular dynamics simulations of nickel and carbon have been used to study the phenomena due to ion impact. The nickel and carbon interactions were described using the Lennard-Jones and Stillinger-Weber potentials respectively. The phenomena occurring after the impact of 100 e V to 1 keV ions were studied in the nickel simulations, which were both two and three-dimensional. Supersonic focussed collision sequences (or focusons) were observed, and associated with these focusons were unexpected sonic bow waves, which were a major energy loss mechanism for the focuson. A number of 2D carbon films were grown and the stress in the films as a function of incident ion energy was Measured. With increasing energy the stress changed from tensile to compressive and reached a maximum around 50 eV, in agreement with experiment.

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Role of ion energy flux on the structural and morphological properties of silicon oxy-nitride composite films deposited by plasma focus device

Radiation Effects and Defects in Solids ◽

10.1080/10420150.2018.1512999 ◽

2018 ◽

Vol 173 (11-12) ◽

pp. 929-943

Author(s):

Ijaz Ahmad Khan ◽

Syed Anwaar Hussain ◽

Amjad Farid ◽

Ali Hussnain ◽

Zeshan Adeel Umar ◽

...

Keyword(s):

Energy Flux ◽

Plasma Focus ◽

Composite Films ◽

Plasma Focus Device ◽

Morphological Properties ◽

Ion Energy

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Kinetics of ion beam nitridation (IBN) of Si and of MBE-grown Ge and SixGe1−x alloys: The role of ion energy, ion dose and substrate temperature

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(92)95821-8 ◽

1992 ◽

Vol 67 (1-4) ◽

pp. 301-307 ◽

Cited By ~ 18

Author(s):

O.C. Hellman ◽

N. Herbots ◽

O. Vancauwenberghe

Keyword(s):

Substrate Temperature ◽

Ion Beam ◽

Ion Energy ◽

Kinetics Of

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Hard Carbon Films with Various Microstructure Prepared by Ion Assisted Evaporation

MRS Proceedings ◽

10.1557/proc-316-911 ◽

1993 ◽

Vol 316 ◽

Cited By ~ 1

Author(s):

J. Ullmann ◽

A. Weber ◽

U. Falke

Keyword(s):

Growth Mechanism ◽

Film Growth ◽

Carbon Films ◽

Carbon Surface ◽

Vickers Indentation ◽

Structure Modification ◽

Hard Carbon ◽

Ion Etching ◽

Ion Energy ◽

Free Ion

ABSTRACTFor a deeper understanding of the creation of carbon films the hydrogen-free ion assisted evaporation (IAE) method with neon species was used. Variation of the ion parameters energy and ion to neutral arrival ratio, delivering the necessary energy for modification of the film growth, results in different microstructures investigated with EELS, HRTEM and TED as well as different microhardnesses measured by dynamical Vickers indentation. A possible film growth mechanism is proposed based on an ion etching of mainly sp2-bonded carbon surface atoms and on defect dominated structure modification below the surface depending on the ion energy

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Ion energy dependence of film properties for diamond-like carbon prepared with plasma-assisted deposition

Journal of Materials Research ◽

10.1557/jmr.2001.0417 ◽

2001 ◽

Vol 16 (11) ◽

pp. 3034-3037 ◽

Cited By ~ 2

Author(s):

Cao Zexian

Keyword(s):

Carbon Films ◽

Root Mean Square Roughness ◽

Film Properties ◽

Ion Energy ◽

Atomic Force ◽

Wave Resonance ◽

Electron Cyclotron Wave ◽

20 Nm ◽

Maximum Content ◽

Resonance Plasma

Hydrogen-free diamondlike carbon films were prepared on Si(100) with electron cyclotron wave-resonance plasma, which serves to sputter the graphite target and to simultaneously bombard the growing surface. Direct penetration of postionized carbon atoms (up to 140 eV) in addition to the momentum transfer from Ar plasma facilities the formation of the Ta–C structure. Surface morphology, mechanical, and optical properties of the deposits were examined with respect to the ion energy. Atomic force microscope images revealed island morphology in deposits with a typical root-mean-square roughness of 20 nm. A maximum content of about 70% for the fourfold-bonded structure was estimated from the Raman profiles, giving rise to a micro hardness of 60 ± 5 GPa.

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Optimisation of Microcrystaline Silicon Deposited by Expanding Thermal Plasma Chemical Vapor Deposition for Solar-Cell Application

MRS Proceedings ◽

10.1557/proc-0989-a07-02 ◽

2007 ◽

Vol 989 ◽

Author(s):

Raul Jimenez Zambrano ◽

R.A.C.M.M. van Swaaij ◽

M.C.M. van de Sanden

Keyword(s):

Chemical Vapor Deposition ◽

Thermal Plasma ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ir Absorption ◽

Solar Cell Application ◽

Ion Energy ◽

Plasma Chemical Vapor Deposition ◽

Absorption Measurements

AbstractThe causes for the porosity of the microcrystalline material deposited by the expanding thermal plasma (ETP) chemical vapor deposition (CVD) technique have been investigated through IR-absorption measurements. The role of impinging ions on the structure of the material is discussed in relation to the hydrogen bounding configuration (microcrystalline factor). The ion energy is controlled through external RF biasing. Correlation between biasing and reduction of porosity is presented. The influence of high deposition pressure is as well studied, related with changes in a-Si structure.

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