Autocorrelation function analysis of phase formation in the initial stage of interfacial reactions of multilayered titanium–silicon thin films

2004 ◽  
Vol 469-470 ◽  
pp. 513-517 ◽  
Author(s):  
T.H. Yang ◽  
S.L. Cheng ◽  
L.J. Chen
Keyword(s):  
Thin Films ◽  
Autocorrelation Function ◽  
Phase Formation ◽  
Function Analysis ◽  
Interfacial Reactions ◽  
Silicon Thin Films ◽  
Initial Stage ◽  
Titanium Silicon

The Phase Formation Sequence In Titanium-Silicon Thin Films

1985 ◽  
Vol 54 ◽  
Author(s):  
Robert Beyers ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Integrated Circuit ◽  
Intermediate Phase ◽  
Metastable Phase ◽  
Equilibrium Phase ◽  
Impurity Content ◽  
High Resistivity ◽  
Si Films ◽  
Titanium Silicon

ABSTRACTThe reliable use of TiSi2 in integrated circuit metallizations will depend in part on an intimate knowledge of the effects of processing variables — such as annealing time, temperature, and ambient — on the phase formation sequence. For this reason, transmission electron microscopy has been used to investigate the formation of TiSi2 thin films on silicon substrates [1]. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti + 2 Si) mixture, we find that a high resistivity (∼60 μΩcm), metastable phase — TiSi2(C49 or ZrSi2 structure) — forms prior to the desired low resistivity (∼15 μΩcm), equilibrium phase — TiSi2(C54 structure). In titanium-silicon diffusion couples, a thin layer of TiSi is also present on top of the metastable TiSi2- For processing temperatures above 550°C, the available data suggest that the metastable TiSi2 forms first and acts as a template for subsequent nucleation of the TiSi phase. In codeposited (Ti + 2 Si) films, TiSi2(C49 structure) is the only intermediate phase. The temperature at which the C49 structure transforms to the C54 structure increases significantly as the film impurity content increases. Differences in earlier reports of TiSi2 formation [2–5] appear to be resolved if x-ray diffraction peaks attributed to Ti5Si3 and TiSi were actually from the metastable TiSi2

Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

1988 ◽  
Vol 100 ◽  
Author(s):  
M. H. Wan ◽  
W. Lur ◽  
H. C. Cheng ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Phase Formation ◽  
Interfacial Reactions ◽  
Transmission Electron ◽  
Titanium Thin Films ◽  
Ion Implanted

ABSTRACTInterfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.

HRTEM Study of the Interfacial Reactions of High-Temperature Sputtered Ti Thin Films on Preamorphized (001)Si

1999 ◽  
Vol 564 ◽  
Author(s):  
S. M Chang ◽  
H. Y Yang ◽  
H. Y Huang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Function Analysis ◽  
Interfacial Reactions ◽  
Simultaneous Presence ◽  
Auto Correlation ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Auto Correlation Function

AbstractInterfacial reactions of high-temperature sputtered Ti thin films on preamorphized (001)Si have been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. Simultaneous presence of multiphases was found to occur in the amorphous TiSix layer at the Ti/Si interface. The enhanced transformation of C54-TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the a-TiSix layer than that in samples deposited at room temperature.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Sign in / Sign up

Export Citation Format

Share Document