Influence of laser annealing on hydrogen bonding in compensated polycrystalline silicon thin films

2005 ◽  
Vol 487 (1-2) ◽  
pp. 89-92 ◽  
Author(s):  
R. Saleh ◽  
N.H. Nickel ◽  
K.V. Maydell
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Thin Films

Crystallinity Evaluation by Microwave Photoconductivity Decay in Double-Layered Polycrystalline Silicon Thin Films Crystallized by Solid Green Laser Annealing

2007 ◽  
Vol 46 (12) ◽  
pp. 7607-7611 ◽  
Author(s):  
Yuta Sugawara ◽  
Yukiharu Uraoka ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Green Laser ◽  
Silicon Thin Films ◽  
Photoconductivity Decay

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

Influence of Laser Annealing on Hydrogen Bonding in Disordered Silicon Thin Films

2003 ◽  
Vol 762 ◽  
Author(s):  
N. H. Nickel ◽  
K. Brendel
Keyword(s):  
Thin Films ◽  
Hydrogen Bonding ◽  
Low Temperatures ◽  
Deposition Temperature ◽  
Laser Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Laser Crystallization ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

AbstractThe influence of laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) on H bonding is investigated. Depending on the deposition temperature the amorphous starting material contains a H concentration of up to 44 at.%. Laser crystallization lowers the H content significantly. Fully crystallized poly-Si contains H concentrations of up to 17 at.%. This reservoir of hydrogen can be used to passivate additional grain boundary defects by annealing the specimens at low temperatures in vacuum. Information on hydrogen bonding is obtained from hydrogen effusion measurements.

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