Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

2006 ◽  
Vol 513 (1-2) ◽  
pp. 380-384 ◽  
Author(s):  
Rui Huang ◽  
Xuanying Lin ◽  
Wenyong Huang ◽  
Ruohe Yao ◽  
Yunpeng Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Film

scholarly journals Low Temperature Growth of Polycrystalline Silicon Films by RF Sputtering Method(1st Report).

1995 ◽  
Vol 61 (6) ◽  
pp. 829-833
Author(s):  
Hiroaki KAKIUCHI ◽  
Hideaki KAWABE ◽  
Kumayasu YOSHII ◽  
Kiyoshi YASUTAKE ◽  
Akihiro TAKEUCHI ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Rf Sputtering ◽  
Silicon Films ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Films

Very low temperature growth of polycrystalline silicon using

1997 ◽  
Vol 101 (1) ◽  
pp. 17-20 ◽  
Author(s):  
Bong Yeol Ryu ◽  
Jai Il Ryu ◽  
Hyun Chul Kim ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Very Low Temperature

Modifying Polycrystalline Films Through Ion Channelling

1983 ◽  
Vol 27 ◽  
Author(s):  
R. B. Iverson ◽  
R. Reif
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Ion Implantation ◽  
Total Dose ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Transmission Electron ◽  
Amorphous Substrate ◽  
Polycrystalline Silicon Film ◽  
Low Temperature Process

ABSTRACTA novel low-temperature process to enhance the grain size of a polycrystalline film on an amorphous substrate has been previously reported. In this process, ion implantation is used to selectively anorphize the film, and undamaged grains act as seed crystals in a subsequent low-temperature anneal. In this work, a 120 nm polycrystalline silicon film was implanted from three angles with phosphorous at 150°K. The total dose was l.0×l015/cm2 . Transmission electron micrographs after a partial anneal (700°C for 30 minutes) indicate that some crystallites survived implantation due to ion channelling in the (111) plane. After a 60 minute anneal at 700°C, 7 μm grains were observed.

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