Modifying Polycrystalline Films Through Ion Channelling

1983 ◽  
Vol 27 ◽  
Author(s):  
R. B. Iverson ◽  
R. Reif
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Ion Implantation ◽  
Total Dose ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Transmission Electron ◽  
Amorphous Substrate ◽  
Polycrystalline Silicon Film ◽  
Low Temperature Process

ABSTRACTA novel low-temperature process to enhance the grain size of a polycrystalline film on an amorphous substrate has been previously reported. In this process, ion implantation is used to selectively anorphize the film, and undamaged grains act as seed crystals in a subsequent low-temperature anneal. In this work, a 120 nm polycrystalline silicon film was implanted from three angles with phosphorous at 150°K. The total dose was l.0×l015/cm2 . Transmission electron micrographs after a partial anneal (700°C for 30 minutes) indicate that some crystallites survived implantation due to ion channelling in the (111) plane. After a 60 minute anneal at 700°C, 7 μm grains were observed.

Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

2006 ◽  
Vol 513 (1-2) ◽  
pp. 380-384 ◽  
Author(s):  
Rui Huang ◽  
Xuanying Lin ◽  
Wenyong Huang ◽  
Ruohe Yao ◽  
Yunpeng Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Film

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L548-L551 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Masaki Hara ◽  
Setsuo Usui
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Polycrystalline Silicon Film
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